General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Features
■ 2.8 A, 60 V. RDS(ON) = 0.2 Ω @ VGS = 4.5 V
                       RDS(ON) = 0.16 Ω @ VGS = 10 V.
■ High density cell design for extremely low RDS(ON).
■ High power and current handling capability in a widely used surface mount package.