制造商 | 部件名 | 数据表 | 功能描述 |
Toshiba Semiconductor |
TC55VBM416AFTN55
|
204Kb / 14P |
1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
|
TC55W800FT-55
|
188Kb / 13P |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
|
TC55VCM416BTGN55
|
238Kb / 18P |
1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
|
TC55VEM416AXBN55
|
208Kb / 14P |
1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
|
TC51WKM516AXBN75
|
115Kb / 11P |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TC551402J
|
343Kb / 7P |
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
|
Renesas Technology Corp |
M6MGB331S8AKT
|
127Kb / 3P |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Toshiba Semiconductor |
TC55V1403J
|
383Kb / 8P |
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
|
Renesas Technology Corp |
M6MGB331S8BKT
|
128Kb / 3P |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Mitsubishi Electric Sem... |
M6MGB160S2BVP
|
269Kb / 30P |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
|