制造商 | 部件名 | 数据表 | 功能描述 |
NXP Semiconductors |
06035J0R8BBS
|
468Kb/15P
|
Heterostructure Field Effect Transistor (GaAs HFET)
Rev. 4.1, 10/2014
|
06035J0R8BBS
|
571Kb/14P
|
RF LDMOS Wideband Integrated Power Amplifiers
|
06035J0R8BS
|
497Kb/16P
|
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 5, 3/2016
|
Search Partnumber :
Start with "06035J0R8" -
Total : 9 ( 1/1 Page) |
NXP Semiconductors |
06035J0R8BBS
|
468Kb/15P |
Heterostructure Field Effect Transistor (GaAs HFET)
Rev. 4.1, 10/2014 |
06035J0R8BBS
|
571Kb/14P |
RF LDMOS Wideband Integrated Power Amplifiers
|
06035J0R8BS
|
497Kb/16P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 5, 3/2016 |
AVX Corporation |
06035J0R1PBSTR
|
340Kb/26P |
Thin-Film Technology
|
NXP Semiconductors |
06035J0R4BBS
|
468Kb/15P |
Heterostructure Field Effect Transistor (GaAs HFET)
Rev. 4.1, 10/2014 |
06035J0R6BS
|
497Kb/16P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 5, 3/2016 |
TriQuint Semiconductor |
06035J0R7ABSTR
|
747Kb/8P |
Edge QAM Gain Stage
|
NXP Semiconductors |
06035J0R7BBS
|
468Kb/15P |
Heterostructure Field Effect Transistor (GaAs HFET)
Rev. 4.1, 10/2014 |
06035J0R9BS
|
497Kb/16P |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Rev. 5, 3/2016 |