制造商 | 部件名 | 数据表 | 功能描述 |
Freescale Semiconductor... |
08051J3R9BBT
|
132Kb/12P
|
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Search Partnumber :
Start with "08051J3R9" -
Total : 29 ( 1/2 Page) |
Freescale Semiconductor... |
08051J3R9BBT
|
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
08051J0R1BBT
|
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
08051J0R3BBT
|
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
NXP Semiconductors |
08051J0R4BBS
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
Freescale Semiconductor... |
08051J0R4BBT
|
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
NXP Semiconductors |
08051J0R5BBS
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
08051J0R5BS
|
726Kb/12P |
RF LDMOS Integrated Power Amplifier
Rev. 3, 12/2010 |
Freescale Semiconductor... |
08051J0R9BBT
|
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
NXP Semiconductors |
08051J150GBS
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
08051J1R0BBS
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
Freescale Semiconductor... |
08051J1R0BBT
|
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
NXP Semiconductors |
08051J1R0BS
|
726Kb/12P |
RF LDMOS Integrated Power Amplifier
Rev. 3, 12/2010 |
Freescale Semiconductor... |
08051J1R2BBT
|
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
NXP Semiconductors |
08051J1R5BBS
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
08051J2R2BS
|
726Kb/12P |
RF LDMOS Integrated Power Amplifier
Rev. 3, 12/2010 |
AVX Corporation |
08051J4R7AASTR
|
1Mb/19P |
Thin-Film Technology
|
08051J4R7AATTR
|
1Mb/19P |
Thin-Film Technology
|
08051J4R7AAWTR
|
1Mb/19P |
Thin-Film Technology
|
08051J4R7ABSTR
|
1Mb/19P |
Thin-Film Technology
|