制造商 | 部件名 | 数据表 | 功能描述 |
NXP Semiconductors |
06035J470BBS
|
468Kb/15P
|
Heterostructure Field Effect Transistor (GaAs HFET)
Rev. 4.1, 10/2014
|
Johanson Technology Inc... |
252R03E470BT3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R03E470BV3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R03L470BT3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R03L470BV3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R03S470BG3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R03S470BT3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R03S470BV3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R05E470BT3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R05E470BV3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R05L470BT3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R05L470BV3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R05S470BG3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R05S470BT3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R05S470BV3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R07E470BT3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R07E470BV3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R07L470BT3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R07L470BV3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|
252R07S470BT3E
|
499Kb/11P
|
MULTI-LAYER HIGH-Q CAPACITORS
|