制造商 | 部件名 | 数据表 | 功能描述 |
Infineon Technologies A... |
IPB60R190C6
|
2Mb/19P
|
Metal Oxide Semiconductor Field Effect Transistor
Rev. 2.1, 2010-02-09
|
IPB60R190C6
|
1Mb/19P
|
Metal Oxide Semiconductor Field Effect Transistor
Rev. 2.2, 2014-12-02
|
Inchange Semiconductor ... |
IPB60R190C6
|
318Kb/2P
|
isc N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IPB60R190C6
|
1Mb/19P
|
600V CoolMOS C6 Power Transistor
Rev. 2.3 2018-02-26
|
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Start with "IPB60R190C6" -
Total : 39 ( 1/2 Page) |
Infineon Technologies A... |
IPB60R190P6
|
3Mb/19P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.2,2015-07-10 |
Inchange Semiconductor ... |
IPB60R190P6
|
189Kb/2P |
Isc N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IPB60R190P6
|
33Kb/1P |
Material Content Data Sheet
27. August 2015 |
IPB60R190P6
|
33Kb/1P |
Material Content Data Sheet
27. August 2015 |
IPB60R199CP
|
322Kb/10P |
CoolMOS Power Transistor
Rev. 2.1 2009-04-06 |
IPB60R199CP
|
366Kb/10P |
CoolMOS짰 Power Transistor
Rev. 2.2 2011-12-20 |
Inchange Semiconductor ... |
IPB60R199CP
|
189Kb/2P |
Isc N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IPB60R199CP
|
337Kb/10P |
CoolMOS Power Transistor
Rev. 2.0 2006-06-19 |
IPB60R199CPA
|
450Kb/11P |
CoolMOS Power Transistor
Rev. 2.0 2009-09-01 |
IPB60R199CP
|
322Kb/10P |
CoolMOS Power Transistor
Rev. 2.1 2009-04-06 |
IPB60R199CP
|
366Kb/10P |
CoolMOS짰 Power Transistor
Rev. 2.2 2011-12-20 |
IPB60R105CFD7
|
1Mb/14P |
600V CoolMOSª CFD7 Power Transistor
Rev. 2.0, 2019-05-17 |
IPB60R120C7
|
1Mb/15P |
CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
Rev.2.0,2015-11-30 |
IPB60R120P7
|
1Mb/14P |
600V CoolMOS짧 P7 Power Transistor
Rev.2.0,2017-09-29 |
Inchange Semiconductor ... |
IPB60R120P7
|
189Kb/2P |
Isc N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IPB60R125C6
|
1Mb/18P |
MOSFET Metal Oxide Semiconductor Field Effect Transistor
Rev. 2.3 |