制造商 | 部件名 | 数据表 | 功能描述 |
Shenzhen Luguang Electr... |
LGE433A
|
218Kb/2P
|
SAW Resonator
|
LGE433M
|
108Kb/4P
|
This specification shall cover the characteristics of 1-port SAW resonator with 433.92M used for remote-control security.
|
Search Partnumber :
Start with "LGE4" -
Total : 100 ( 1/5 Page) |
Shenzhen Luguang Electr... |
LGE433A
|
218Kb/2P |
SAW Resonator
|
LGE433M
|
108Kb/4P |
This specification shall cover the characteristics of 1-port SAW resonator with 433.92M used for remote-control security.
|
LGE024N03-5DL8
|
873Kb/5P |
N-Channel Enhancement Mode MOSFET
Revision:20170701-P1 |
LGE07TD60BK
|
888Kb/7P |
600V, 7A, Trench FS II Fast IGBT
Revision:20170701-P1 |
LGE3401L
|
1Mb/6P |
P-Channel Enhancement Mode Power MOSFET
|
LGE3D02120F
|
1Mb/4P |
Silicon Carbide Schottky Diode
Revision:20230214-P1 |
LGE3D04065A
|
2Mb/4P |
Silicon Carbide Schottky Diode
|
LGE3D05120A
|
1Mb/4P |
Silicon CarbideSchottkyDiode
Revision:20220701-P1 |
LGE3D06065A
|
2Mb/4P |
Silicon Carbide Schottky Diode
Revision:20170701-P1 |
LGE3D06065F
|
1Mb/5P |
Silicon Carbide Schottky Diode
Revision:20170701-P1 |
LGE3D06065G
|
1Mb/5P |
Silicon Carbide Schottky Diode
Revision:20170701-P1 |
LGE3D06065N
|
2Mb/4P |
Silicon Carbide Schottky Diode
Revision:20170701-P1 |
LGE3D10065A
|
1Mb/4P |
Silicon Carbide Schottky Diode
Revision:20220701-P1 |
LGE3D10065E
|
1Mb/4P |
Silicon Carbide Schottky Diode
Revision:20230214-P1 |
LGE3D10065F
|
2Mb/4P |
Silicon Carbide Schottky Diode
Revision:20170701-P1 |
LGE3D10065G
|
1Mb/4P |
Silicon Carbide Schottky Diode
Revision:20230210-P1 |
LGE3D10065H
|
2Mb/4P |
Silicon Carbide SchottkyDiode
Revision:20230214-P1 |
LGE3D15065A
|
1Mb/4P |
Silicon Carbide Schottky Diode
Revision:20220701-P1 |