制造商 | 部件名 | 数据表 | 功能描述 |
NEC |
NE27200
|
39Kb/8P
|
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
Renesas Technology Corp |
NE27200
|
199Kb/10P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1996
|
Search Partnumber :
Start with "NE27" -
Total : 102 ( 1/6 Page) |
NEC |
NE27200
|
39Kb/8P |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
Renesas Technology Corp |
NE27200
|
199Kb/10P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1996 |
Rohm |
NE2001-VA20
|
166Kb/5P |
Near edge thermal printhead (8 dots / mm)
|
NE2001-VA20A
|
166Kb/5P |
Near edge thermal printhead (8 dots / mm)
|
NE2002-VA10A
|
215Kb/5P |
Near edge thermal printhead (8 dots / mm)
|
NE2004-VA10A
|
213Kb/5P |
Near edge thin film thermal printhead (8 dots / mm)
|
NEC |
NE202
|
329Kb/9P |
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
Renesas Technology Corp |
NE20200
|
570Kb/8P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1988 |
NEC |
NE20248
|
329Kb/9P |
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
NE20283A
|
329Kb/9P |
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
Renesas Technology Corp |
NE202930
|
217Kb/8P |
Silicon NPN Epitaxial High Frequency Transistor
|
California Eastern Labs |
NE202930
|
571Kb/7P |
Silicon NPN Epitaxial High Frequency Transistor
|
Renesas Technology Corp |
NE202930-T1
|
217Kb/8P |
Silicon NPN Epitaxial High Frequency Transistor
|
California Eastern Labs |
NE202930-T1
|
571Kb/7P |
Silicon NPN Epitaxial High Frequency Transistor
|
NE202930-T1-A
|
571Kb/7P |
Silicon NPN Epitaxial High Frequency Transistor
|
Renesas Technology Corp |
NE202930
|
228Kb/8P |
Silicon NPN Epitaxial High Frequency Transistor
|
NEC |
NE202XX
|
329Kb/9P |
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
NE202XX-1.4
|
329Kb/9P |
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|