| 制造商 | 部件名 | 数据表 | 功能描述 |
NEC |
NE321000
|
48Kb/12P
|
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
California Eastern Labs |
NE321000
|
135Kb/6P
|
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
|
NE321000
|
141Kb/6P
|
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
Renesas Technology Corp |
NE321000
|
215Kb/14P
|
HETERO JUNCTION FIELDEFFECT TRANSISTOR
1999
|
California Eastern Labs |
NE321000
|
135Kb/6P
|
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
NEC |
NE3210S01
|
62Kb/16P
|
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3210S01
|
414Kb/7P
|
SUPER LOW NOISE HJ FET
|
Renesas Technology Corp |
NE3210S01
|
197Kb/18P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999
|
NEC |
NE3210S01-T1
|
62Kb/16P
|
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3210S01-T1
|
414Kb/7P
|
SUPER LOW NOISE HJ FET
|
Renesas Technology Corp |
NE3210S01-T1
|
197Kb/18P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999
|
NEC |
NE3210S01-T1B
|
62Kb/16P
|
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3210S01-T1B
|
414Kb/7P
|
SUPER LOW NOISE HJ FET
|
Renesas Technology Corp |
NE3210S01-T1B
|
197Kb/18P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999
|
Chinese ▼ 
English
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand