NE32AL 数据表, PDF

	NE32AL	NE32
如同	No Data	No Data
开始	No Data	NE32(80) NE320(3) NE321(14) NE324(15) NE325(27) NE326(3) NE329*(18)
结尾	No Data	No Data
包括	No Data	NE32(39)

制造商

制造商	部件名	数据表	功能描述
NEC	NE32000	247Kb/7P	LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
	NE32083A	247Kb/7P	LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
	NE32084	247Kb/7P	LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
	NE321000	48Kb/12P	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
California Eastern Labs	NE321000	135Kb/6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
California Eastern Labs	NE321000	141Kb/6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
Renesas Technology Corp	NE321000	215Kb/14P	HETERO JUNCTION FIELDEFFECT TRANSISTOR 1999
California Eastern Labs	NE321000	135Kb/6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NEC	NE3210S01	62Kb/16P	X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
California Eastern Labs	NE3210S01	414Kb/7P	SUPER LOW NOISE HJ FET
Renesas Technology Corp	NE3210S01	197Kb/18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1999
NEC	NE3210S01-T1	62Kb/16P	X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
California Eastern Labs	NE3210S01-T1	414Kb/7P	SUPER LOW NOISE HJ FET
Renesas Technology Corp	NE3210S01-T1	197Kb/18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1999
NEC	NE3210S01-T1B	62Kb/16P	X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
California Eastern Labs	NE3210S01-T1B	414Kb/7P	SUPER LOW NOISE HJ FET
Renesas Technology Corp	NE3210S01-T1B	197Kb/18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1999
NEC	NE32400	85Kb/8P	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
	NE32400	55Kb/5P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
	NE32400	55Kb/5P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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NE32AL 数据表, PDF

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