| 制造商 | 部件名 | 数据表 | 功能描述 |
California Eastern Labs |
NE350184C
|
269Kb/8P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Technology Corp |
NE350184C
|
223Kb/11P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
2005
|
California Eastern Labs |
NE350184C-T1
|
269Kb/8P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Technology Corp |
NE350184C-T1
|
223Kb/11P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
2005
|
|
NE350184C-T1-A
|
223Kb/11P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
2005
|
California Eastern Labs |
NE350184C-T1A
|
269Kb/8P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Technology Corp |
NE350184C-T1A
|
223Kb/11P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
2005
|
|
NE350184C-T1A-A
|
223Kb/11P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
2005
|
California Eastern Labs |
NE3503M04
|
394Kb/7P
|
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET
|
Renesas Technology Corp |
NE3503M04
|
206Kb/11P
|
C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3503M04-A
|
394Kb/7P
|
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET
|
Renesas Technology Corp |
NE3503M04-T2
|
206Kb/11P
|
C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3503M04-T2-A
|
394Kb/7P
|
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET
|
Renesas Technology Corp |
NE3503M04-T2B
|
206Kb/11P
|
C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3505M04
|
335Kb/20P
|
HETERO JUNCTION FIELD EFFECT TRANSISITOR
|
|
NE3505M04-T2
|
335Kb/20P
|
HETERO JUNCTION FIELD EFFECT TRANSISITOR
|
|
NE3508M04
|
1Mb/11P
|
HETERO JUNCTION FIELD EFFECT TRANSISITOR
|
Renesas Technology Corp |
NE3508M04
|
213Kb/12P
|
L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3508M04-A
|
1Mb/11P
|
HETERO JUNCTION FIELD EFFECT TRANSISITOR
|
|
NE3508M04-T2
|
1Mb/11P
|
HETERO JUNCTION FIELD EFFECT TRANSISITOR
|
Chinese ▼ 
English
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand