制造商 | 部件名 | 数据表 | 功能描述 |
Renesas Technology Corp |
NE4211M01
|
206Kb/10P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
2003
|
NE4211M01-T1
|
206Kb/10P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
2003
|
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Start with "NE4211" -
Total : 40 ( 1/2 Page) |
Renesas Technology Corp |
NE4211M01
|
206Kb/10P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
2003 |
NE4211M01-T1
|
206Kb/10P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
2003 |
NEC |
NE4210M01
|
79Kb/12P |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Technology Corp |
NE4210M01
|
193Kb/14P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1998 |
NE4210M01-T1
|
193Kb/14P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1998 |
NEC |
NE4210M01-T1
|
79Kb/12P |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NE4210S01
|
65Kb/16P |
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE4210S01
|
252Kb/7P |
SUPER LOW NOISE HJ FET
|
Renesas Technology Corp |
NE4210S01
|
199Kb/18P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999 |
NEC |
NE4210S01-T1
|
65Kb/16P |
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE4210S01-T1
|
252Kb/7P |
SUPER LOW NOISE HJ FET
|
Renesas Technology Corp |
NE4210S01-T1
|
199Kb/18P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999 |
NE4210S01-T1B
|
199Kb/18P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999 |
California Eastern Labs |
NE4210S01-T1B
|
252Kb/7P |
SUPER LOW NOISE HJ FET
|
NEC |
NE4210S01-T1B
|
65Kb/16P |
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NE42484A
|
72Kb/2P |
NONLINEAR MODEL
|
Renesas Technology Corp |
NE42484A
|
189Kb/12P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1991 |
NE42484A-SL
|
189Kb/12P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1991 |