| 制造商 | 部件名 | 数据表 | 功能描述 |
Renesas Technology Corp |
NE5500479A-T1
|
285Kb/11P
|
SILICON POWER MOS FET
2003
|
| Search Partnumber :
Start with "NE5500479A-T1" -
Total : 26 ( 1/2 Page) |
Renesas Technology Corp |
NE5500479A
|
285Kb/11P |
SILICON POWER MOS FET
2003 |
|
NE5500434
|
290Kb/9P |
SILICON POWER MOS FET
2007 |
|
NE5500434-A
|
137Kb/2P |
RF & Microwave device
|
|
NE5500434-AZ
|
290Kb/9P |
SILICON POWER MOS FET
2007 |
|
NE5500434-T1
|
290Kb/9P |
SILICON POWER MOS FET
2007 |
|
NE5500434-T1-AZ
|
290Kb/9P |
SILICON POWER MOS FET
2007 |
|
NE5500134
|
285Kb/8P |
SILICON POWER MOS FET
2007 |
|
NE5500134-A
|
137Kb/2P |
RF & Microwave device
|
|
NE5500134-AZ
|
285Kb/8P |
SILICON POWER MOS FET
2007 |
|
NE5500134-T1
|
285Kb/8P |
SILICON POWER MOS FET
2007 |
|
NE5500134-T1-AZ
|
285Kb/8P |
SILICON POWER MOS FET
2007 |
|
NE5500179A
|
298Kb/13P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE5500179A
|
43Kb/5P |
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
|
NEC |
NE5500179A
|
66Kb/11P |
SILICON POWER MOS FET
|
Renesas Technology Corp |
NE5500179A-T1
|
298Kb/13P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE5500179A-T1
|
43Kb/5P |
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
|
NEC |
NE5500179A-T1
|
66Kb/11P |
SILICON POWER MOS FET
|
Renesas Technology Corp |
NE5500234
|
293Kb/9P |
SILICON POWER MOS FET
2007 |
California Eastern Labs |
NE5500234
|
308Kb/6P |
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
|
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