制造商 | 部件名 | 数据表 | 功能描述 |
Renesas Technology Corp |
NE5500134
|
285Kb/8P
|
SILICON POWER MOS FET
2007
|
NE5500134-A
|
137Kb/2P
|
RF & Microwave device
|
NE5500134-AZ
|
285Kb/8P
|
SILICON POWER MOS FET
2007
|
NE5500134-T1
|
285Kb/8P
|
SILICON POWER MOS FET
2007
|
NE5500134-T1-AZ
|
285Kb/8P
|
SILICON POWER MOS FET
2007
|
NEC |
NE5500179A
|
66Kb/11P
|
SILICON POWER MOS FET
|
California Eastern Labs |
NE5500179A
|
43Kb/5P
|
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE5500179A
|
298Kb/13P
|
SILICON POWER MOS FET
2003
|
NEC |
NE5500179A-T1
|
66Kb/11P
|
SILICON POWER MOS FET
|
California Eastern Labs |
NE5500179A-T1
|
43Kb/5P
|
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE5500179A-T1
|
298Kb/13P
|
SILICON POWER MOS FET
2003
|
California Eastern Labs |
NE5500234
|
308Kb/6P
|
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
|
Renesas Technology Corp |
NE5500234
|
293Kb/9P
|
SILICON POWER MOS FET
2007
|
NE5500234-A
|
137Kb/2P
|
RF & Microwave device
|
California Eastern Labs |
NE5500234-AZ
|
308Kb/6P
|
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
|
Renesas Technology Corp |
NE5500234-AZ
|
293Kb/9P
|
SILICON POWER MOS FET
2007
|
California Eastern Labs |
NE5500234-T1
|
308Kb/6P
|
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
|
Renesas Technology Corp |
NE5500234-T1
|
293Kb/9P
|
SILICON POWER MOS FET
2007
|
California Eastern Labs |
NE5500234-T1-AZ
|
308Kb/6P
|
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
|
Renesas Technology Corp |
NE5500234-T1-AZ
|
293Kb/9P
|
SILICON POWER MOS FET
2007
|