| 制造商 | 部件名 | 数据表 | 功能描述 |
NEC |
NE5510179A
|
39Kb/4P
|
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5510179A
|
42Kb/4P
|
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
NEC |
NE5510179A-T1
|
39Kb/4P
|
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5510179A-T1
|
42Kb/4P
|
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
NEC |
NE5510279A
|
39Kb/5P
|
3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5510279A
|
42Kb/5P
|
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE5510279A
|
288Kb/12P
|
SILICON POWER MOS FET
2003
|
NEC |
NE5510279A-T1
|
39Kb/5P
|
3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5510279A-T1
|
42Kb/5P
|
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE5510279A-T1
|
288Kb/12P
|
SILICON POWER MOS FET
2003
|
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