制造商 | 部件名 | 数据表 | 功能描述 |
NXP Semiconductors |
NE5512D
|
33Kb/4P
|
Dual high-performance operational amplifier
August 31, 1994
|
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Start with "NE5512D" -
Total : 55 ( 1/3 Page) |
NXP Semiconductors |
NE5512N
|
33Kb/4P |
Dual high-performance operational amplifier
August 31, 1994 |
NEC |
NE5510179A
|
39Kb/4P |
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5510179A
|
42Kb/4P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
NEC |
NE5510179A-T1
|
39Kb/4P |
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5510179A-T1
|
42Kb/4P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE5510279A
|
288Kb/12P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE5510279A
|
42Kb/5P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
NEC |
NE5510279A
|
39Kb/5P |
3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
NE5510279A-T1
|
39Kb/5P |
3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
California Eastern Labs |
NE5510279A-T1
|
42Kb/5P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE5510279A-T1
|
288Kb/12P |
SILICON POWER MOS FET
2003 |
NE5511279A
|
272Kb/10P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE5511279A
|
297Kb/4P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
NE5511279A
|
296Kb/4P |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
NEC |
NE5511279A
|
99Kb/3P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
California Eastern Labs |
NE5511279A-A
|
297Kb/4P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
NEC |
NE5511279A-T1
|
99Kb/3P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
Renesas Technology Corp |
NE5511279A-T1
|
272Kb/10P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE5511279A-T1-A
|
296Kb/4P |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|