制造商 | 部件名 | 数据表 | 功能描述 |
California Eastern Labs |
NE5520379A
|
390Kb/9P
|
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
|
Renesas Technology Corp |
NE5520379A
|
295Kb/13P
|
SILICON POWER MOS FET
2003
|
NE5520379A-T1
|
295Kb/13P
|
SILICON POWER MOS FET
2003
|
NE5520379A-T1A
|
295Kb/13P
|
SILICON POWER MOS FET
2003
|
California Eastern Labs |
NE5520379A-T1A-A
|
390Kb/9P
|
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
|
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Renesas Technology Corp |
NE5520379A-T1
|
295Kb/13P |
SILICON POWER MOS FET
2003 |
NE5520379A-T1A
|
295Kb/13P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE5520379A-T1A-A
|
390Kb/9P |
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
|
NEC |
NE5520279A
|
166Kb/7P |
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
|
Renesas Technology Corp |
NE5520279A
|
290Kb/11P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE5520279A
|
351Kb/8P |
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
|
Renesas Technology Corp |
NE5520279A-T1
|
290Kb/11P |
SILICON POWER MOS FET
2003 |
NEC |
NE5520279A-T1
|
166Kb/7P |
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
|
California Eastern Labs |
NE5520279A-T1-A
|
351Kb/8P |
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
|
Renesas Technology Corp |
NE5520279A-T1A
|
290Kb/11P |
SILICON POWER MOS FET
2003 |