制造商 | 部件名 | 数据表 | 功能描述 |
NEC |
NE5520279A
|
166Kb/7P
|
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
|
California Eastern Labs |
NE5520279A
|
351Kb/8P
|
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
|
Renesas Technology Corp |
NE5520279A
|
290Kb/11P
|
SILICON POWER MOS FET
2003
|
NEC |
NE5520279A-T1
|
166Kb/7P
|
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
|
Renesas Technology Corp |
NE5520279A-T1
|
290Kb/11P
|
SILICON POWER MOS FET
2003
|
California Eastern Labs |
NE5520279A-T1-A
|
351Kb/8P
|
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
|
Renesas Technology Corp |
NE5520279A-T1A
|
290Kb/11P
|
SILICON POWER MOS FET
2003
|
California Eastern Labs |
NE5520379A
|
390Kb/9P
|
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
|
Renesas Technology Corp |
NE5520379A
|
295Kb/13P
|
SILICON POWER MOS FET
2003
|
NE5520379A-T1
|
295Kb/13P
|
SILICON POWER MOS FET
2003
|
NE5520379A-T1A
|
295Kb/13P
|
SILICON POWER MOS FET
2003
|
California Eastern Labs |
NE5520379A-T1A-A
|
390Kb/9P
|
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
|
NXP Semiconductors |
NE5521
|
69Kb/5P
|
LVDT signal conditioner
August 31, 1994
|
NE5521D
|
69Kb/5P
|
LVDT signal conditioner
August 31, 1994
|
NE5521N
|
69Kb/5P
|
LVDT signal conditioner
August 31, 1994
|
California Eastern Labs |
NE552R479A
|
495Kb/9P
|
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
|
NE552R479A
|
605Kb/7P
|
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE552R479A
|
291Kb/11P
|
SILICON POWER MOS FET
2003
|
California Eastern Labs |
NE552R479A-T1
|
605Kb/7P
|
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE552R479A-T1
|
291Kb/11P
|
SILICON POWER MOS FET
2003
|