制造商 | 部件名 | 数据表 | 功能描述 |
California Eastern Labs |
NE552R479A-T1
|
605Kb/7P
|
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE552R479A-T1
|
291Kb/11P
|
SILICON POWER MOS FET
2003
|
California Eastern Labs |
NE552R479A-T1-A
|
605Kb/7P
|
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
NE552R479A-T1A
|
605Kb/7P
|
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE552R479A-T1A
|
291Kb/11P
|
SILICON POWER MOS FET
2003
|
California Eastern Labs |
NE552R479A-T1A-A
|
495Kb/9P
|
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
|
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Total : 6 ( 1/1 Page) |
California Eastern Labs |
NE552R479A-T1
|
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE552R479A-T1
|
291Kb/11P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE552R479A-T1-A
|
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
NE552R479A-T1A
|
605Kb/7P |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
Renesas Technology Corp |
NE552R479A-T1A
|
291Kb/11P |
SILICON POWER MOS FET
2003 |
California Eastern Labs |
NE552R479A-T1A-A
|
495Kb/9P |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
|