制造商 | 部件名 | 数据表 | 功能描述 |
Infineon Technologies A... |
PXAC243502FVV1R250XTMA1
|
1Mb/10P
|
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22
|
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Start with "PXAC243502FVV1R250XTMA1" -
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Infineon Technologies A... |
PXAC243502FVV1R250
|
1Mb/10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22 |
PXAC243502FVV1R0
|
1Mb/10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22 |
PXAC243502FVV1R0XTMA1
|
1Mb/10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22 |
PXAC243502FV
|
1Mb/10P |
High Power RF LDMOS Field Effect Transistor
Rev. 03.1, 2015-04-13 |
PXAC243502FV
|
1Mb/10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22 |