制造商 | 部件名 | 数据表 | 功能描述 |
OSRAM GmbH |
Q65110A0136
|
65Kb/6P
|
GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power)
2003-04-10
|
Search Partnumber :
Start with "Q65110A0" -
Total : 100 ( 1/5 Page) |
OSRAM GmbH |
Q65110A0136
|
65Kb/6P |
GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power)
2003-04-10 |
List of Unclassifed Man... |
Q65110A1058
|
178Kb/15P |
Vorlaufige Daten Preliminary Data
|
ams AG |
Q65110A1203
|
1Mb/19P |
Silicon PIN Photodiode
Version 1.3 2022-08-11 |
OSRAM GmbH |
Q65110A1209
|
139Kb/8P |
Silizium-PIN-Fotodiode in SMT und als Reverse Gullwing
|
Q65110A1209
|
756Kb/17P |
LIDAR, Pre-Crash, ACC Rain Sensors
|
List of Unclassifed Man... |
Q65110A1458
|
200Kb/14P |
Vorlaufige Daten Preliminary Data
|
Q65110A1470
|
200Kb/14P |
Vorlaufige Daten Preliminary Data
|
OSRAM GmbH |
Q65110A1569
|
141Kb/8P |
Engwinklige LED in MIDLED-Gehause
|
Q65110A1570
|
173Kb/8P |
Engwinklige LED im MIDLED-Geh채use (880 nm)
|
Q65110A1571
|
173Kb/8P |
Engwinklige LED im MIDLED-Geh채use (880 nm)
|
Q65110A1572
|
141Kb/8P |
Engwinklige LED in MIDLED-Gehause
|
Q65110A1574
|
388Kb/14P |
NPN-Silizium-Fototransistor im MIDLED-Geh채use
|
ams AG |
Q65110A1574
|
1Mb/20P |
Silicon NPN Phototransistor in MIDLED package
Version 1.5 2023-06-16 |
OSRAM GmbH |
Q65110A1668
|
111Kb/2P |
OLED DISPLAY SOLUTIONS
|
Q65110A1670
|
90Kb/2P |
OLED DISPLAY SOLUTIONS
|
Q65110A1742
|
525Kb/16P |
Hyper TOPLED짰 Enhanced optical Power LED
|
Q65110A1743
|
525Kb/16P |
Hyper TOPLED짰 Enhanced optical Power LED
|
Q65110A1746
|
386Kb/20P |
Version 1.0 (Replacement in due course)
|
ams AG |
Q65110A1749
|
1Mb/23P |
With a diameter of just 2 mm, the PointLED is one of the smallest packages in its class and achieves high luminous efficacies.
Version 1.2 2019-07-16 |