| 制造商 | 部件名 | 数据表 | 功能描述 |
ams AG |
Q65110A2446
|
1Mb/24P
|
Two chip LEDs for indicators that allow to display red, green and yellow by color mixing
Version 1.2 2022-05-10
|
|
Q65110A2447
|
428Kb/15P
|
Enhanced Optical Power LED Lead (Pb) Free Product - RoHS Compliant
2012-11-14
|
|
Q65110A2448
|
428Kb/15P
|
Enhanced Optical Power LED Lead (Pb) Free Product - RoHS Compliant
2012-11-14
|
|
Q65110A2449
|
428Kb/15P
|
Enhanced Optical Power LED Lead (Pb) Free Product - RoHS Compliant
2012-11-14
|
| Search Partnumber :
Start with "Q65110A244" -
Total : 17 ( 1/1 Page) |
ams AG |
Q65110A2446
|
1Mb/24P |
Two chip LEDs for indicators that allow to display red, green and yellow by color mixing
Version 1.2 2022-05-10 |
|
Q65110A2447
|
428Kb/15P |
Enhanced Optical Power LED Lead (Pb) Free Product - RoHS Compliant
2012-11-14 |
|
Q65110A2448
|
428Kb/15P |
Enhanced Optical Power LED Lead (Pb) Free Product - RoHS Compliant
2012-11-14 |
|
Q65110A2449
|
428Kb/15P |
Enhanced Optical Power LED Lead (Pb) Free Product - RoHS Compliant
2012-11-14 |
OSRAM GmbH |
Q65110A2427
|
498Kb/20P |
Coupling into Light Guides
|
|
Q65110A2464
|
176Kb/11P |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
|
|
Q65110A2465
|
157Kb/10P |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
|
ams AG |
Q65110A2466
|
760Kb/17P |
TOPLED® Black High Power Infrared Emitter (850 nm)
Version 1.7 2021-10-14 |
OSRAM GmbH |
Q65110A2467
|
152Kb/10P |
10IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
|
|
Q65110A2482
|
203Kb/10P |
NPN-Silizium-Fototransistor im SMT SIDELED짰-Gehause Silicon NPN Phototransistor in SMT SIDELED짰-Package
|
|
Q65110A2484
|
203Kb/10P |
NPN-Silizium-Fototransistor im SMT SIDELED짰-Gehause Silicon NPN Phototransistor in SMT SIDELED짰-Package
|
|
Q65110A2485
|
203Kb/10P |
NPN-Silizium-Fototransistor im SMT SIDELED짰-Gehause Silicon NPN Phototransistor in SMT SIDELED짰-Package
|
|
Q65110A2486
|
203Kb/10P |
NPN-Silizium-Fototransistor im SMT SIDELED짰-Gehause Silicon NPN Phototransistor in SMT SIDELED짰-Package
|
|
Q65110A2487
|
203Kb/10P |
NPN-Silizium-Fototransistor im SMT SIDELED짰-Gehause Silicon NPN Phototransistor in SMT SIDELED짰-Package
|
|
Q65110A2488
|
203Kb/10P |
NPN-Silizium-Fototransistor im SMT SIDELED짰-Gehause Silicon NPN Phototransistor in SMT SIDELED짰-Package
|
|
Q65110A2490
|
203Kb/10P |
NPN-Silizium-Fototransistor im SMT SIDELED짰-Gehause Silicon NPN Phototransistor in SMT SIDELED짰-Package
|
Chinese ▼ 
English
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand