| 制造商 | 部件名 | 数据表 | 功能描述 |
OSRAM GmbH |
Q65110-A0185
|
153Kb/15P
|
Power TOPLED짰 Enhanced optical Power LED (ATON짰)
|
|
Q65110-A0273
|
153Kb/15P
|
Power TOPLED짰 Enhanced optical Power LED (ATON짰)
|
|
Q65110-A0274
|
153Kb/15P
|
Power TOPLED짰 Enhanced optical Power LED (ATON짰)
|
Siemens Semiconductor G... |
Q65110-L80F
|
201Kb/4P
|
Double Differential Magneto Resistor
|
OSRAM GmbH |
Q65110A0136
|
65Kb/6P
|
GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power)
2003-04-10
|
List of Unclassifed Man... |
Q65110A1058
|
178Kb/15P
|
Vorlaufige Daten Preliminary Data
|
ams AG |
Q65110A1203
|
1Mb/19P
|
Silicon PIN Photodiode
Version 1.3 2022-08-11
|
OSRAM GmbH |
Q65110A1209
|
139Kb/8P
|
Silizium-PIN-Fotodiode in SMT und als Reverse Gullwing
|
|
Q65110A1209
|
756Kb/17P
|
LIDAR, Pre-Crash, ACC Rain Sensors
|
List of Unclassifed Man... |
Q65110A1458
|
200Kb/14P
|
Vorlaufige Daten Preliminary Data
|
|
Q65110A1470
|
200Kb/14P
|
Vorlaufige Daten Preliminary Data
|
OSRAM GmbH |
Q65110A1569
|
141Kb/8P
|
Engwinklige LED in MIDLED-Gehause
|
|
Q65110A1570
|
173Kb/8P
|
Engwinklige LED im MIDLED-Geh채use (880 nm)
|
|
Q65110A1571
|
173Kb/8P
|
Engwinklige LED im MIDLED-Geh채use (880 nm)
|
|
Q65110A1572
|
141Kb/8P
|
Engwinklige LED in MIDLED-Gehause
|
|
Q65110A1574
|
388Kb/14P
|
NPN-Silizium-Fototransistor im MIDLED-Geh채use
|
ams AG |
Q65110A1574
|
1Mb/20P
|
Silicon NPN Phototransistor in MIDLED package
Version 1.5 2023-06-16
|
OSRAM GmbH |
Q65110A1668
|
111Kb/2P
|
OLED DISPLAY SOLUTIONS
|
|
Q65110A1670
|
90Kb/2P
|
OLED DISPLAY SOLUTIONS
|
|
Q65110A1742
|
525Kb/16P
|
Hyper TOPLED짰 Enhanced optical Power LED
|
Chinese ▼ 
English
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand