| 制造商 | 部件名 | 数据表 | 功能描述 |
Infineon Technologies A... |
IKW30N60H3
|
2Mb/16P |
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
Rev.2.2,2014-03-12 |
|
IKW30N60DTP
|
1Mb/16P |
600V DuoPack IGBT and diode
Rev.2.1,2016-02-08 |
|
IKW30N60T
|
397Kb/13P |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Rev. 2.1 Dev-04 |
|
IKW30N60T
|
506Kb/13P |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.6 19.05.2015 |
|
IKW30N60TA
|
671Kb/14P |
Designed for DC/AC converters for Automotive Application
Rev. 2.3 17.09.2014 |
|
IKW30N60T
|
506Kb/13P |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Rev. 2.6 19.05.2015 |
|
IKW30N65EL5
|
1Mb/16P |
Best-in-Class tradeoff between conduction and switching losses
Rev.2.1,2014-12-10 |
|
IKW30N65ES5
|
1Mb/16P |
high Speed soft switching IGBT with full current rated RAPID 1 diode
Rev.2.1,2015-09-22 |
|
IKW30N65ES5
|
1Mb/16P |
high Speed soft switching IGBT with full current rated RAPID 1 diode
Rev.2.1,2015-09-22 |
|
IKW30N65ET7
|
1Mb/17P |
Low Loss Duopack: IGBT with Trench and Fieldstop technology
V2.2 2020-11-11 |
|
IKW30N65H5
|
2Mb/17P |
High speed switching series fifth generation
Rev.2.1,2015-05-06 |
|
IKW30N65NL5
|
1Mb/16P |
Best-in-Class tradeoff between conduction and switching losses
Rev.2.1,2014-12-10 |
|
IKW30N65WR5
|
1Mb/15P |
Reverse conducting IGBT with monolithic body diode
Rev.1.3,2015-06-01 |
|
IKW30N65WR5
|
1Mb/15P |
Reverse conducting IGBT with monolithic body diode
Rev.1.3,2015-06-01 |
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