HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Low package inductance • Fast intrinsic rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor drives • Temperature and lighting controls Advantages • PLUS 247TM package for clip or spring mounting • Space savings • High power density
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