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HY27USXXX 数据表 (PDF) - Hynix Semiconductor

HY27USXXX Datasheet PDF - Hynix Semiconductor
部件名 HY27USXXX
下载  HY27USXXX 下载

文件大小   729.94 Kbytes
  43 Pages
制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor
功能描述 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

HY27USXXX Datasheet (PDF)

Go To PDF Page 下载 数据表
HY27USXXX Datasheet PDF - Hynix Semiconductor

部件名 HY27USXXX
下载  HY27USXXX Click to download

文件大小   729.94 Kbytes
  43 Pages
制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor
功能描述 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

HY27USXXX 数据表 (HTML) - Hynix Semiconductor

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HY27USXXX 产品详情

DESCRIPTION
The HYNIX HY27(U/S)SXX121M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.
The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x8 or x16 Input/ Output bus.
This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.

Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of NAND Flash devices it is strongly recommended to implement an Error Correction Code (ECC). A Write Protect pin is available to give a hardware protection against program and erase operations.

The devices feature an open-drain Ready/Busy output that can be used to identify if the Program/ Erase/Read (PER) Controller is currently active. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor.

A Copy Back command is available to optimize the management of defective blocks. When a Page Program operation fails, the data can be programmed in another page without having to resend the data to be programmed.




类似零件编号 - HY27USXXX

制造商部件名数据表功能描述
logo
Hynix Semiconductor
HY27US08121A HYNIX-HY27US08121A Datasheet
419Kb / 49P
   512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27US08121B HYNIX-HY27US08121B Datasheet
238Kb / 16P
   512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27US08122B HYNIX-HY27US08122B Datasheet
238Kb / 16P
   512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27US081G1M HYNIX-HY27US081G1M Datasheet
318Kb / 39P
   1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
HY27US08281A HYNIX-HY27US08281A Datasheet
344Kb / 44P
   128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
More results


类似说明 - HY27USXXX

制造商部件名数据表功能描述
logo
Hynix Semiconductor
HY27US08121B HYNIX-HY27US08121B Datasheet
238Kb / 16P
   512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27SS08121A HYNIX-HY27SS08121A Datasheet
419Kb / 49P
   512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
logo
Micron Technology
MT29F1G08 MICRON-MT29F1G08 Datasheet
103Kb / 1P
   NAND Flash
logo
Samsung semiconductor
K9F1G08U0D SAMSUNG-K9F1G08U0D Datasheet
687Kb / 38P
   1Gb NAND Flash
logo
Hynix Semiconductor
HY27UF082G2B HYNIX-HY27UF082G2B Datasheet
411Kb / 54P
   2Gb NAND FLASH
HY27UG088G5B HYNIX-HY27UG088G5B Datasheet
380Kb / 53P
   8Gb NAND FLASH
logo
List of Unclassifed Man...
S846-SAS ETC2-S846-SAS Datasheet
250Kb / 2P
   MLC Nand Flash
logo
A-Data Technology
GAMMIXS10 A-DATA-GAMMIXS10 Datasheet
291Kb / 2P
   3D NAND Flash
logo
Hynix Semiconductor
HY27UF084G2M HYNIX-HY27UF084G2M Datasheet
342Kb / 49P
   4Gbit (512Mx8bit) NAND Flash
logo
A-Data Technology
SD700 A-DATA-SD700 Datasheet
1Mb / 2P
   Quality 3D NAND Flash
More results




关于 Hynix Semiconductor


Hynix Semiconductor是一家韩国公司,专门从事内存半导体的设计和制造。
该公司成立于1983年,总部位于韩国伊歇。
Hynix是世界上领先的DRAM(动态随机访问存储器)和NAND闪存的生产商之一,它们用于各种应用程序,例如计算机系统,移动设备和固态驱动器。
Hynix以其在内存半导体技术方面的专业知识以及为客户提供高质量和高性能存储产品的能力。
该公司在世界各地拥有运营和设施,并与客户紧密合作,提供满足其特定需求和需求的定制内存解决方案。
除了其内存产品外,Hynix还为汽车和数据中心市场提供了一系列产品和解决方案,例如System-A-A-Chip(SOC)产品(SOC)产品和高带宽内存(HBM)产品。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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