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HY27US16561M 数据表 (PDF) - Hynix Semiconductor

HY27US16561M Datasheet PDF - Hynix Semiconductor
部件名 HY27US16561M
下载  HY27US16561M 下载

文件大小   733.15 Kbytes
  44 Pages
制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor
功能描述 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

HY27US16561M Datasheet (PDF)

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HY27US16561M Datasheet PDF - Hynix Semiconductor

部件名 HY27US16561M
下载  HY27US16561M Click to download

文件大小   733.15 Kbytes
  44 Pages
制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor
功能描述 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

HY27US16561M 数据表 (HTML) - Hynix Semiconductor

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HY27US16561M 产品详情

DESCRIPTION
The HYNIX HY27(U/S)SXX561M series is a family of non-volatile Flash memories that uses NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
    - Cost effective solutions for mass storage applications
NAND INTERFACE
    - x8 or x16 bus width.
    - Multiplexed Address/ Data
    - Pinout compatibility for all densities
SUPPLY VOLTAGE
    - 3.3V device: VCC = 2.7 to 3.6V : HY27USXX561M
    - 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX561M
Memory Cell Array
    - 256Mbit = 528 Bytes x 32 Pages x 2,048 Blocks

PAGE SIZE
- x8 device : (512 + 16 spare) Bytes : HY27US08561M
- x16 device: (256 + 8 spare) Words : HY27US16561M
BLOCK SIZE
    - x8 device: (16K + 512 spare) Bytes
    - x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
    - Random access: 10us (max)
    - Sequential access: 50ns (min)
    - Page program time: 200us (typ)
COPY BACK PROGRAM MODE
    - Fast page copy without external buffering

FAST BLOCK ERASE
    - Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE

CHIP ENABLE DONT CARE OPTION
    - Simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
    - Boot from NAND support
    - Automatic Memory Download
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
    - Program/Erase locked during Power transitions
DATA INTEGRITY
    - 100,000 Program/Erase cycles
    - 10 years Data Retention
PACKAGE
    - HY27US(08/16)561M-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm)
        - HY27US(08/16)561M-T (Lead)
        - HY27US(08/16)561M-TP (Lead Free)
    - HY27US08561M-V(P) : 48-Pin WSOP1 (12 x 17 x 0.7 mm)
        - HY27US08561M-V (Lead)
        - HY27US08561M-VP (Lead Free)
    - HY27(U/S)S(08/16)561M-F(P) : 63-Ball FBGA (9.0 x 11 x 1.0 mm)
        - HY27US(08/16)561M-F (Lead)
        - HY27US(08/16)561M-FP (Lead Free)
        - HY27SS(08/16)561M-F (Lead)
        - HY27SS(08/16)561M-FP (Lead Free)




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关于 Hynix Semiconductor


Hynix Semiconductor是一家韩国公司,专门从事内存半导体的设计和制造。
该公司成立于1983年,总部位于韩国伊歇。
Hynix是世界上领先的DRAM(动态随机访问存储器)和NAND闪存的生产商之一,它们用于各种应用程序,例如计算机系统,移动设备和固态驱动器。
Hynix以其在内存半导体技术方面的专业知识以及为客户提供高质量和高性能存储产品的能力。
该公司在世界各地拥有运营和设施,并与客户紧密合作,提供满足其特定需求和需求的定制内存解决方案。
除了其内存产品外,Hynix还为汽车和数据中心市场提供了一系列产品和解决方案,例如System-A-A-Chip(SOC)产品(SOC)产品和高带宽内存(HBM)产品。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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