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IS42S32200B-6TI 数据表 (PDF) - Integrated Silicon Solution, Inc

IS42S32200B-6TI Datasheet PDF - Integrated Silicon Solution, Inc
部件名 IS42S32200B-6TI
下载  IS42S32200B-6TI 下载

文件大小   537.88 Kbytes
  56 Pages
制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc
功能描述 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S32200B-6TI Datasheet (PDF)

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IS42S32200B-6TI Datasheet PDF - Integrated Silicon Solution, Inc

部件名 IS42S32200B-6TI
下载  IS42S32200B-6TI Click to download

文件大小   537.88 Kbytes
  56 Pages
制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc
功能描述 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S32200B-6TI 数据表 (HTML) - Integrated Silicon Solution, Inc

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IS42S32200B-6TI 产品详情

GENERAL DESCRIPTION

The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256 columns by 32 bits.

The 64Mb SDRAM includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible.



FEATURES

• Clock frequency: 166, 143 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Internal bank for hiding row access/precharge

• Single 3.3V power supply

• LVTTL interface

• Programmable burst length: (1, 2, 4, 8, full page)

• Programmable burst sequence: Sequential/Interleave

• Self refresh modes

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

• Industrial temperature availability

• Package 400-mil 86-pin TSOP II

• Lead free package is available




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关于 Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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