HY27UF081G2M-TCB 数据表(PDF)

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HY27UF081G2M-TCB 数据表 (PDF) - Hynix Semiconductor

HY27UF081G2M-TCB Datasheet PDF - Hynix Semiconductor


部件名	HY27UF081G2M-TCB

下载	HY27UF081G2M-TCB 下载

文件大小	476.81 Kbytes

页	48 Pages

制造商	HYNIX [Hynix Semiconductor]

网页	http://www.skhynix.com/kor/main.do

标志

功能描述	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

HY27UF081G2M-TCB Datasheet (PDF)

下载数据表


部件名	HY27UF081G2M-TCB

下载	HY27UF081G2M-TCB Click to download

文件大小	476.81 Kbytes

页	48 Pages

制造商	HYNIX [Hynix Semiconductor]

网页	http://www.skhynix.com/kor/main.do

标志

功能描述	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

HY27UF081G2M-TCB 数据表 (HTML) - Hynix Semiconductor

HY27UF081G2M-TCB Datasheet HTML 1Page - Hynix Semiconductor

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HY27UF081G2M-TCB Datasheet HTML 8Page - Hynix Semiconductor

HY27UF081G2M-TCB Datasheet HTML 9Page - Hynix Semiconductor

HY27UF081G2M-TCB Datasheet HTML 10Page - Hynix Semiconductor

HY27UF081G2M-TCB 产品详情

SUMMARY DESCRIPTION

The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.

类似零件编号 - HY27UF081G2M-TCB

制造商	部件名	数据表	功能描述
STMicroelectronics	HY27UF081G2M	614Kb / 32P	USB 2.0 high-speed Flash drive controller

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类似说明 - HY27UF081G2M-TCB

制造商	部件名	数据表	功能描述
Hynix Semiconductor	HY27UA081G1M	729Kb / 43P	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
	HY27SF081G2A	394Kb / 46P	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
	HY27UF081G2A	390Kb / 46P	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
	HY27US081G1M	318Kb / 39P	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
OKI electronic componet...	ML54051	283Kb / 37P	NAND Flash Memory Controller
Elite Semiconductor Mem...	F50L512M41A	700Kb / 36P	SPI-NAND Flash Memory
OKI electronic componet...	ML54053	222Kb / 26P	NAND Flash Memory Controller
Macronix International	MX30LF1208AA-TI	762Kb / 48P	512M-bit NAND Flash Memory
Macronix International	MX30LF1G08AA-XKI	766Kb / 48P	1G-bit NAND Flash Memory
Toshiba Semiconductor	TC58NVG2S0FTA00	67Kb / 3P	NAND Flash Memory(SLC Middle Capacity)

More results

关于 Hynix Semiconductor

Hynix Semiconductor是一家韩国公司，专门从事内存半导体的设计和制造。
该公司成立于1983年，总部位于韩国伊歇。
Hynix是世界上领先的DRAM（动态随机访问存储器）和NAND闪存的生产商之一，它们用于各种应用程序，例如计算机系统，移动设备和固态驱动器。
Hynix以其在内存半导体技术方面的专业知识以及为客户提供高质量和高性能存储产品的能力。
该公司在世界各地拥有运营和设施，并与客户紧密合作，提供满足其特定需求和需求的定制内存解决方案。
除了其内存产品外，Hynix还为汽车和数据中心市场提供了一系列产品和解决方案，例如System-A-A-Chip（SOC）产品（SOC）产品和高带宽内存（HBM）产品。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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