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06033J220GBS 数据表 (PDF) - NXP Semiconductors

06033J220GBS Datasheet PDF - NXP Semiconductors
部件名 06033J220GBS
下载  06033J220GBS 下载

文件大小   901.87 Kbytes
  18 Pages
制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors
功能描述 Heterojunction Bipolar Transistor Technology (InGaP HBT)

06033J220GBS Datasheet (PDF)

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06033J220GBS Datasheet PDF - NXP Semiconductors

部件名 06033J220GBS
下载  06033J220GBS Click to download

文件大小   901.87 Kbytes
  18 Pages
制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors
功能描述 Heterojunction Bipolar Transistor Technology (InGaP HBT)

06033J220GBS 数据表 (HTML) - NXP Semiconductors

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06033J220GBS 产品详情

Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier

The MMA20312BV is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as CDMA, TD--SCDMA, PCS, UMTS and LTE at operating voltages from 3 to 5 V. The amplifier is housed in a cost--effective, surface mount QFN plastic package.

Features
• Frequency: 1800--2200 MHz
• P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
• Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
• OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)
• Active Bias Control (adjustable externally)
• Single 3 to 5 V Supply
• Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.




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关于 NXP Semiconductors


NXP半导体是一家公开交易的跨国公司,设计,开发和制造各种半导体和集成电路,用于各种应用,包括汽车,工业,通信和消费市场。

该公司成立于2006年,总部位于荷兰的埃因霍温。

NXP提供了广泛的产品组合,包括微控制器,微处理器,安全身份验证IC,电源管理ICS,RF和微波炉组件以及传感器解决方案等。

该公司的产品旨在具有节能,安全和可靠,并用于各种应用中,包括汽车系统,工业自动化和控制,智能家居和建筑物以及连接的设备。

NXP致力于创新和客户满意度,并致力于为客户提供最佳的半导体解决方案,以满足他们的需求。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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