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PC28F128P30T85 数据表 (PDF) - Intel Corporation

PC28F128P30T85 Datasheet PDF - Intel Corporation
部件名 PC28F128P30T85
下载  PC28F128P30T85 下载

文件大小   1609.91 Kbytes
  102 Pages
制造商  INTEL [Intel Corporation]
网页  http://www.intel.com
标志 INTEL - Intel Corporation
功能描述 Intel StrataFlash Embedded Memory

PC28F128P30T85 Datasheet (PDF)

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PC28F128P30T85 Datasheet PDF - Intel Corporation

部件名 PC28F128P30T85
下载  PC28F128P30T85 Click to download

文件大小   1609.91 Kbytes
  102 Pages
制造商  INTEL [Intel Corporation]
网页  http://www.intel.com
标志 INTEL - Intel Corporation
功能描述 Intel StrataFlash Embedded Memory

PC28F128P30T85 数据表 (HTML) - Intel Corporation

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PC28F128P30T85 产品详情

Introduction
This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications.

Product Features
■ High performance
    — 85/88 ns initial access
    — 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
    — 25 ns asynchronous-page read mode
    — 4-, 8-, 16-, and continuous-word burst mode
    — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
    — 1.8 V buffered programming at 7 µs/byte (Typ)
■ Architecture
    — Multi-Level Cell Technology: Highest Density at Lowest Cost
    — Asymmetrically-blocked architecture
    — Four 32-KByte parameter blocks: top or bottom configuration
    — 128-KByte main blocks
■ Voltage and Power
    —VCC(core) voltage: 1.7 V – 2.0 V
    —VCCQ (I/O) voltage: 1.7 V – 3.6 V
    — Standby current: 55 µA (Typ) for 256-Mbit
    — 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
■ Quality and Reliability
    — Operating temperature: –40 °C to +85 °C
        • 1-Gbit in SCSP is –30 °C to +85 °C
    — Minimum 100,000 erase cycles per block
    — ETOX™ VIII process technology (130 nm)
■ Security
    — One-Time Programmable Registers:
        • 64 unique factory device identifier bits
        • 64 user-programmable OTP bits
        • Additional 2048 user-programmable OTP bits
    — Selectable OTP Space in Main Array:
        • 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
    — Absolute write protection: VPP= VSS
    — Power-transition erase/program lockout
    — Individual zero-latency block locking
    — Individual block lock-down
■ Software
    — 20 µs (Typ) program suspend
    — 20 µs (Typ) erase suspend
    —Intel® Flash Data Integrator optimized
    — Basic Command Set and Extended Command Set compatible
    — Common Flash Interface capable
■ Density and Packaging
    — 64/128/256-Mbit densities in 56-Lead TSOP package
    — 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
    — 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
    — 16-bit wide data bus




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关于 Intel Corporation


英特尔公司(Intel Corporation)是一家总部位于加利福尼亚州圣克拉拉(Santa Clara)的美国跨国公司和技术公司。
它是基于收入的世界上最大,最高价值的半导体芯片制造商之一。
英特尔以其开发微处理器,计算机的中央处理单元(CPU)而闻名。
Intel成立于1968年,一直是计算机硬件行业的领导者五十年了。
除了微处理器外,该公司还提供各种产品和技术,包括数据中心和网络设备,固态驱动器,物联网(IoT)设备等。
英特尔还是5G网络和自动驾驶汽车开发的领先参与者。
专注于创新和技术领导力,英特尔继续在塑造计算和技术的未来中发挥重要作用。
该公司在研发上进行了大量投资,并因其创新而获得了17,000多项专利。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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