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HY57V641620ET-7 数据表 (PDF) - Hynix Semiconductor

HY57V641620ET-7 Datasheet PDF - Hynix Semiconductor
部件名 HY57V641620ET-7
下载  HY57V641620ET-7 下载

文件大小   117.29 Kbytes
  13 Pages
制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor
功能描述 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

HY57V641620ET-7 Datasheet (PDF)

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HY57V641620ET-7 Datasheet PDF - Hynix Semiconductor

部件名 HY57V641620ET-7
下载  HY57V641620ET-7 Click to download

文件大小   117.29 Kbytes
  13 Pages
制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor
功能描述 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

HY57V641620ET-7 数据表 (HTML) - Hynix Semiconductor

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HY57V641620ET-7 产品详情

DESCRIPTION           

The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16.

HY57V641620E(L/S)T(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized withthe rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.



FEATURES

• Voltage: VDD, VDDQ 3.3V supply voltage

• All device pins are compatible with LVTTL interface

• 54 Pin TSOPII (Lead or Lead Free Package)

• All inputs and outputs referenced to positive edge of system clock

• Data mask function by UDQM, LDQM

• Internal four banks operation

• Auto refresh and self refresh

• 4096 Refresh cycles / 64ms

• Programmable Burst Length and Burst Type

- 1, 2, 4, 8 or full page for Sequential Burst

- 1, 2, 4 or 8 for Interleave Burst

• Programmable CASLatency; 2, 3 Clocks

• Burst Read Single Write operation




类似零件编号 - HY57V641620ET-7

制造商部件名数据表功能描述
logo
Hynix Semiconductor
HY57V641620HG HYNIX-HY57V641620HG Datasheet
86Kb / 12P
   4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG-I HYNIX-HY57V641620HG-I Datasheet
145Kb / 12P
   4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HGLT-5I HYNIX-HY57V641620HGLT-5I Datasheet
145Kb / 12P
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HY57V641620HGLT-8I HYNIX-HY57V641620HGLT-8I Datasheet
145Kb / 12P
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HY57V641620HGLT-HI HYNIX-HY57V641620HGLT-HI Datasheet
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类似说明 - HY57V641620ET-7

制造商部件名数据表功能描述
logo
Hynix Semiconductor
HY5V66EF6 HYNIX-HY5V66EF6 Datasheet
959Kb / 12P
   64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
H57V2562GTR-60C HYNIX-H57V2562GTR-60C Datasheet
234Kb / 23P
   256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
H57V2562GTR-60I HYNIX-H57V2562GTR-60I Datasheet
234Kb / 23P
   256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
HY57V281620ET HYNIX-HY57V281620ET Datasheet
126Kb / 13P
   128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
H57V1262GFR-50X HYNIX-H57V1262GFR-50X Datasheet
256Kb / 12P
   128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
H57V1262GTR-50X HYNIX-H57V1262GTR-50X Datasheet
205Kb / 13P
   128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
H57V2562GFR-60C HYNIX-H57V2562GFR-60C Datasheet
279Kb / 23P
   256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
H57V2582GTR-60C HYNIX-H57V2582GTR-60C Datasheet
228Kb / 22P
   256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-60I HYNIX-H57V2582GTR-60I Datasheet
229Kb / 22P
   256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H55S1262EFP-60E HYNIX-H55S1262EFP-60E Datasheet
733Kb / 54P
   128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O
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关于 Hynix Semiconductor


Hynix Semiconductor是一家韩国公司,专门从事内存半导体的设计和制造。
该公司成立于1983年,总部位于韩国伊歇。
Hynix是世界上领先的DRAM(动态随机访问存储器)和NAND闪存的生产商之一,它们用于各种应用程序,例如计算机系统,移动设备和固态驱动器。
Hynix以其在内存半导体技术方面的专业知识以及为客户提供高质量和高性能存储产品的能力。
该公司在世界各地拥有运营和设施,并与客户紧密合作,提供满足其特定需求和需求的定制内存解决方案。
除了其内存产品外,Hynix还为汽车和数据中心市场提供了一系列产品和解决方案,例如System-A-A-Chip(SOC)产品(SOC)产品和高带宽内存(HBM)产品。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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