The 1.8 Volt Intel StrataFlash® wireless memory with 3-Volt I/O product is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 volt low-voltage, multilevel cell (MLC) technology. ■ High performance Read-While-Write/Erase — 85 ns initial access — 52MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode — 25 ns asynchronous-page mode — 4-, 8-, 16-, and continuous-word burst mode — Burst suspend — Programmable WAIT configuration — Buffered Enhanced Factory Programming (Buffered EFP): 3.5 µs/byte (Typ) — 1.8 V low-power buffered and non-buffered programming @ 10 µs/byte (Typ) ■ Architecture — Asymmetrically-blocked architecture — Multiple 8-Mbit partitions: 64Mb and 128Mb devices — Multiple 16-Mbit partitions: 256Mb devices — Four 16-KWord parameter blocks: top or bottom configurations — 64K-Word main blocks — Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE) — Status register for partition and device status ■ Power — 1.7 V - 2.0 V VCC operation — I/O voltage: 2.2 V - 3.3 V — Standby current: 30 µA (Typ) — 4-Word synchronous read current: 17 mA (Typ) @ 54 MHz — Automatic Power Savings (APS) mode
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