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HY57V121620 数据表 (PDF) - Hynix Semiconductor

HY57V121620 Datasheet PDF - Hynix Semiconductor
部件名 HY57V121620
下载  HY57V121620 下载

文件大小   160.73 Kbytes
  12 Pages
制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor
功能描述 4 Banks x 8M x 16Bit Synchronous DRAM

HY57V121620 Datasheet (PDF)

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HY57V121620 Datasheet PDF - Hynix Semiconductor

部件名 HY57V121620
下载  HY57V121620 Click to download

文件大小   160.73 Kbytes
  12 Pages
制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor
功能描述 4 Banks x 8M x 16Bit Synchronous DRAM

HY57V121620 数据表 (HTML) - Hynix Semiconductor

Back Button HY57V121620 Datasheet HTML 1Page - Hynix Semiconductor HY57V121620 Datasheet HTML 2Page - Hynix Semiconductor HY57V121620 Datasheet HTML 3Page - Hynix Semiconductor HY57V121620 Datasheet HTML 4Page - Hynix Semiconductor HY57V121620 Datasheet HTML 5Page - Hynix Semiconductor HY57V121620 Datasheet HTML 6Page - Hynix Semiconductor HY57V121620 Datasheet HTML 7Page - Hynix Semiconductor HY57V121620 Datasheet HTML 8Page - Hynix Semiconductor HY57V121620 Datasheet HTML 9Page - Hynix Semiconductor HY57V121620 Datasheet HTML 10Page - Hynix Semiconductor Next Button 

HY57V121620 产品详情

DESCRIPTION
The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16.
HY57V121620 is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.

FEATURES
• Single 3.3±0.3V power supply
• All device pins are compatible with LVTTL interface
• JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch
• All inputs and outputs referenced to positive edge of system clock
• Data mask function by UDQM, LDQM
• Internal four banks operation
• Auto refresh and self refresh
• 8192 refresh cycles / 64ms
• Programmable Burst Length and Burst Type
    - 1, 2, 4, 8 or Full page for Sequential Burst
    - 1, 2, 4 or 8 for Interleave Burst
• Programmable CAS Latency ; 2, 3 Clocks




类似零件编号 - HY57V121620

制造商部件名数据表功能描述
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Hynix Semiconductor
HY57V161610D HYNIX-HY57V161610D Datasheet
73Kb / 13P
   2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610D-I HYNIX-HY57V161610D-I Datasheet
574Kb / 11P
   2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610DTC-10 HYNIX-HY57V161610DTC-10 Datasheet
73Kb / 13P
   2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610DTC-10I HYNIX-HY57V161610DTC-10I Datasheet
574Kb / 11P
   2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610DTC-15 HYNIX-HY57V161610DTC-15 Datasheet
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类似说明 - HY57V121620

制造商部件名数据表功能描述
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Samsung semiconductor
KM416S4030C SAMSUNG-KM416S4030C Datasheet
124Kb / 11P
   1M x 16Bit x 4 Banks Synchronous DRAM
KM416S8030 SAMSUNG-KM416S8030 Datasheet
116Kb / 10P
   2M x 16Bit x 4 Banks Synchronous DRAM
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Hynix Semiconductor
HY57V561620B HYNIX-HY57V561620B Datasheet
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HY57V651620B HYNIX-HY57V651620B Datasheet
81Kb / 12P
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Samsung semiconductor
K4S511632D SAMSUNG-K4S511632D Datasheet
45Kb / 9P
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TBS6416B4E ETC2-TBS6416B4E Datasheet
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Hynix Semiconductor
HY57V641620HG HYNIX-HY57V641620HG Datasheet
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   4 Banks x 1M x 16Bit Synchronous DRAM
HY57V561620C HYNIX-HY57V561620C Datasheet
217Kb / 12P
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HY57V641620HG-I HYNIX-HY57V641620HG-I Datasheet
145Kb / 12P
   4 Banks x 1M x 16Bit Synchronous DRAM
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Samsung semiconductor
K4S641632C SAMSUNG-K4S641632C Datasheet
1Mb / 42P
   1M x 16Bit x 4 Banks Synchronous DRAM
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关于 Hynix Semiconductor


Hynix Semiconductor是一家韩国公司,专门从事内存半导体的设计和制造。
该公司成立于1983年,总部位于韩国伊歇。
Hynix是世界上领先的DRAM(动态随机访问存储器)和NAND闪存的生产商之一,它们用于各种应用程序,例如计算机系统,移动设备和固态驱动器。
Hynix以其在内存半导体技术方面的专业知识以及为客户提供高质量和高性能存储产品的能力。
该公司在世界各地拥有运营和设施,并与客户紧密合作,提供满足其特定需求和需求的定制内存解决方案。
除了其内存产品外,Hynix还为汽车和数据中心市场提供了一系列产品和解决方案,例如System-A-A-Chip(SOC)产品(SOC)产品和高带宽内存(HBM)产品。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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