制造商 | 部件名 | 数据表 | 功能描述 |
Hynix Semiconductor |
HY27US08561M
|
733Kb / 44P |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
|
HY27SS08561A
|
428Kb / 47P |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
|
H55S2622JFR-60M
|
1Mb / 55P |
256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O
|
HY5S5B6ELF-HE
|
245Kb / 27P |
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
|
H55S2562JFR-60M
|
689Kb / 52P |
256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O
|
Infineon Technologies A... |
HYB25L256160AF
|
1Mb / 56P |
256MBit Mobile-RAM
Rev. 1.2, April 2004 |
Hynix Semiconductor |
H5MS2562JFR-E3M
|
1Mb / 62P |
256Mb (16Mx16bit) Mobile DDR SDRAM
|
Qimonda AG |
HYB18L512320BF-7.5
|
991Kb / 23P |
DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM
|
Fujitsu Component Limit... |
MB82DBS16164A-80L
|
35Kb / 1P |
256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode
|
List of Unclassifed Man... |
V55C2256164VB
|
560Kb / 46P |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
|