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HY27UF084G2M 数据表 (PDF) - Hynix Semiconductor

HY27UF084G2M Datasheet PDF - Hynix Semiconductor
部件名 HY27UF084G2M
下载  HY27UF084G2M 下载

文件大小   342.15 Kbytes
  49 Pages
制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor
功能描述 4Gbit (512Mx8bit) NAND Flash

HY27UF084G2M Datasheet (PDF)

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HY27UF084G2M Datasheet PDF - Hynix Semiconductor

部件名 HY27UF084G2M
下载  HY27UF084G2M Click to download

文件大小   342.15 Kbytes
  49 Pages
制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor
功能描述 4Gbit (512Mx8bit) NAND Flash

HY27UF084G2M 数据表 (HTML) - Hynix Semiconductor

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HY27UF084G2M 产品详情

SUMMARY DESCRIPTION

The HYNIX HY27UF084G2M series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

The device contains 4096 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.

A program operation allows to write the 2112-byte page in typical 200us and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) block.

Data in the page mode can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. This interface allows a reduced pin count and easy migration towards different densities, without any rearrangement of footprint.



FEATURES SUMMARY

HIGH DENSITY NAND FLASH MEMORIES

   - Cost effective solutions for mass storage applications

NAND INTERFACE

   - x8 width.

   - Multiplexed Address/ Data

   - Pinout compatibility for all densities

SUPPLY VOLTAGE

   - 3.3V device: VCC = 2.7 to 3.6V : HY27UF084G2M

Memory Cell Array

   = (2K+ 64) Bytes x 64 Pages x 4,096 Blocks

PAGE SIZE

   - x8 device : (2K + 64 spare) Bytes

      : HY27UF084G2M

BLOCK SIZE

   - x8 device: (128K + 4K spare) Bytes

PAGE READ / PROGRAM

   - Random access: 25us (max.)

   - Sequential access: 30ns (min.)

   - Page program time: 200us (typ.)

COPY BACK PROGRAM MODE

   - Fast page copy without external buffering

CACHE PROGRAM MODE

   - Internal Cache Register to improve the program throughput

FAST BLOCK ERASE

   - Block erase time: 2ms (Typ.)

STATUS REGISTER

ELECTRONIC SIGNATURE

   - 1st cycle : Manufacturer Code

   - 2nd cycle: Device Code

CHIP ENABLE DONT CARE

   - Simple interface with microcontroller

SERIAL NUMBER OPTION

HARDWARE DATA PROTECTION

   - Program/Erase locked during Power transitions

DATA INTEGRITY

   - 100,000 Program/Erase cycles (with 1bit/512byte ECC)

   - 10 years Data Retention

PACKAGE

   - HY27UF084G2M-T(P)

      : 48-Pin TSOP1 (12 x 20 x 1.2 mm)

      - HY27UF084G2M-T (Lead)

      - HY27UF084G2M-TP (Lead Free)

   - HY27UF084G2M-UP

      : 52-ULGA (12 x 17 x 0.65 mm)

      - HY27UF084G2M-UP (Lead Free)



 




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关于 Hynix Semiconductor


Hynix Semiconductor是一家韩国公司,专门从事内存半导体的设计和制造。
该公司成立于1983年,总部位于韩国伊歇。
Hynix是世界上领先的DRAM(动态随机访问存储器)和NAND闪存的生产商之一,它们用于各种应用程序,例如计算机系统,移动设备和固态驱动器。
Hynix以其在内存半导体技术方面的专业知识以及为客户提供高质量和高性能存储产品的能力。
该公司在世界各地拥有运营和设施,并与客户紧密合作,提供满足其特定需求和需求的定制内存解决方案。
除了其内存产品外,Hynix还为汽车和数据中心市场提供了一系列产品和解决方案,例如System-A-A-Chip(SOC)产品(SOC)产品和高带宽内存(HBM)产品。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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