Introduction This document contains information pertaining to the Numonyx™ Embedded Flash Memory (J3 v D) device features, operation, and specifications. Product Features ■ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) ■ Performance — 75 ns Initial Access Speed (32,64,128 Mbit densities) — 95 ns Initial Access Speed (256Mbit only) — 25 ns 8-word and 4-word Asynchronous page-mode reads — 32-Byte Write buffer; 4 µs per Byte Effective programming time ■ System Voltage — VCC = 2.7 V to 3.6 V — VCCQ = 2.7 V to 3.6 V ■ Packaging — 56-Lead TSOP (32, 64, 128, 256 Mbit) — 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit) ■ Security — Enhanced security options for code protection — 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits — Absolute protection with VPEN = GND — Individual block locking — Block erase/program lockout during power transitions ■ Software — Program and erase suspend support — Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible ■ Quality and Reliability — Operating temperature: -40 °C to +85 °C — 100K Minimum erase cycles per block — 0.13 µm ETOX™ VIII Process technology
|