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K9F1208U0M-YCB0 数据表 (PDF) - Samsung semiconductor

K9F1208U0M-YCB0 Datasheet PDF - Samsung semiconductor
部件名 K9F1208U0M-YCB0
下载  K9F1208U0M-YCB0 下载

文件大小   1139.02 Kbytes
  41 Pages
制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor
功能描述 64M x 8 Bit NAND Flash Memory

K9F1208U0M-YCB0 Datasheet (PDF)

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K9F1208U0M-YCB0 Datasheet PDF - Samsung semiconductor

部件名 K9F1208U0M-YCB0
下载  K9F1208U0M-YCB0 Click to download

文件大小   1139.02 Kbytes
  41 Pages
制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor
功能描述 64M x 8 Bit NAND Flash Memory

K9F1208U0M-YCB0 数据表 (HTML) - Samsung semiconductor

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K9F1208U0M-YCB0 产品详情

General Description
The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.

Features
· Voltage Supply : 2.7V~3.6V
· Organization
   - Memory Cell Array : (64M + 2,048K)bit x 8bit
   - Data Register : (512 + 16)bit x8bit multipled by four planes
· Automatic Program and Erase
   - Page Program : (512 + 16)Byte
   - Block Erase : (16K + 512)Byte
· 528-Byte Page Read Operation
   - Random Access : 12ms(Max.)
   - Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
   - Program time : 200ms(Typ.)
   - Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
   - Endurance : 100K Program/Erase Cycles
   - Data Retention : 10 Years
· Command Register Operation
· Intelligent Copy-Back Operation
· Package :
   - K9F1208U0M-YCB0, K9F1208U0M-YIB0 : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
· Simultaneous Four Page/Block Program/Erase




类似零件编号 - K9F1208U0M-YCB0

制造商部件名数据表功能描述
logo
Samsung semiconductor
K9F1208U0A SAMSUNG-K9F1208U0A Datasheet
968Kb / 45P
   64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208U0A SAMSUNG-K9F1208U0A Datasheet
748Kb / 46P
   64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208U0A-F SAMSUNG-K9F1208U0A-F Datasheet
748Kb / 46P
   64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208U0A-P SAMSUNG-K9F1208U0A-P Datasheet
748Kb / 46P
   64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208U0A-V SAMSUNG-K9F1208U0A-V Datasheet
748Kb / 46P
   64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
More results


类似说明 - K9F1208U0M-YCB0

制造商部件名数据表功能描述
logo
Samsung semiconductor
K9F1208Q0B SAMSUNG-K9F1208Q0B Datasheet
767Kb / 45P
   64M x 8 Bit NAND Flash Memory
K9F1208R0B SAMSUNG-K9F1208R0B Datasheet
1Mb / 45P
   64M x 8 Bit NAND Flash Memory
K9K1208U0M SAMSUNG-K9K1208U0M Datasheet
354Kb / 26P
   64M x 8 Bit NAND Flash Memory
K9K1208U0A-YCB0 SAMSUNG-K9K1208U0A-YCB0 Datasheet
357Kb / 27P
   64M x 8 Bit NAND Flash Memory
DS_K9K1208U0A SAMSUNG-DS_K9K1208U0A Datasheet
359Kb / 27P
   64M x 8 Bit NAND Flash Memory
K9K1208Q0C SAMSUNG-K9K1208Q0C Datasheet
953Kb / 39P
   64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K91G08Q0M SAMSUNG-K91G08Q0M Datasheet
729Kb / 40P
   128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A SAMSUNG-K9K1G08U0A Datasheet
906Kb / 43P
   128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1208D0A SAMSUNG-K9F1208D0A Datasheet
748Kb / 46P
   64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1216U0A SAMSUNG-K9F1216U0A Datasheet
968Kb / 45P
   64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
More results



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