General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (–4.5V – 20V).

Features
• –6.5 A, –30 V
   RDS(ON) = 19 mΩ @ VGS = –10 V
   RDS(ON) = 30 mΩ @ VGS = –4.5 V
• Extended VGSS range (±20V) for battery applications
• High performance trench technology for extremely low RDS(ON)
• Low profile TSSOP-8 package

Applications
• Battery protection
• DC/DC conversion
• Power management
• Load switch