General Description
This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor’s advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
• -5.8 A, -20 V. RDS(on) = 0.050 Ω @ VGS = -10 V
                         RDS(on) = 0.090 Ω @ VGS = -4.5 V.
• Low gate charge.
• Fast switching speed.
• High power and current handling capability.

Applications
• Battery switch
• Load switch
• Motor controls