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HY5DV641622AT 数据表 (PDF) - Hynix Semiconductor

HY5DV641622AT Datasheet PDF - Hynix Semiconductor
部件名 HY5DV641622AT
下载  HY5DV641622AT 下载

文件大小   276.42 Kbytes
  27 Pages
制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor
功能描述 64M(4Mx16) DDR SDRAM

HY5DV641622AT Datasheet (PDF)

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HY5DV641622AT Datasheet PDF - Hynix Semiconductor

部件名 HY5DV641622AT
下载  HY5DV641622AT Click to download

文件大小   276.42 Kbytes
  27 Pages
制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor
功能描述 64M(4Mx16) DDR SDRAM

HY5DV641622AT 数据表 (HTML) - Hynix Semiconductor

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HY5DV641622AT 产品详情

DESCRIPTION

The Hynix HY5DV641622 is a 67,108,864-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth.



FEATURES

•3.3V for VDDand 2.5V for VDDQpower supply

• All inputs and outputs are compatible with SSTL_2 interface

• JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch

• Fully differential clock inputs (CK, /CK) operation

• Double data rate interface

• Source synchronous - data transaction aligned to bidirectional data strobe (DQS)

• x16 device has 2 bytewide data strobes (LDQS, UDQS) per each x8 I/O

• Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ)

• Data(DQ) and Write masks(DM) latched on the both rising and falling edges of the data strobe

• All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock

• Write mask byte controls by LDM and UDM

• Programmable /CAS Latency 3 / 4 supported

• Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode

• Internal 4 bank operations with single pulsed /RAS

• tRAS Lock-Out function supported

• Auto refresh and self refresh supported

• 4096 refresh cycles / 64ms

• Full, Half and Matched Impedance(Weak) strength driver option controlled by EMRS




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关于 Hynix Semiconductor


Hynix Semiconductor是一家韩国公司,专门从事内存半导体的设计和制造。
该公司成立于1983年,总部位于韩国伊歇。
Hynix是世界上领先的DRAM(动态随机访问存储器)和NAND闪存的生产商之一,它们用于各种应用程序,例如计算机系统,移动设备和固态驱动器。
Hynix以其在内存半导体技术方面的专业知识以及为客户提供高质量和高性能存储产品的能力。
该公司在世界各地拥有运营和设施,并与客户紧密合作,提供满足其特定需求和需求的定制内存解决方案。
除了其内存产品外,Hynix还为汽车和数据中心市场提供了一系列产品和解决方案,例如System-A-A-Chip(SOC)产品(SOC)产品和高带宽内存(HBM)产品。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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