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N28F001BX-T150 数据表 (PDF) - Intel Corporation

N28F001BX-T150 Datasheet PDF - Intel Corporation
部件名 N28F001BX-T150
下载  N28F001BX-T150 下载

文件大小   436.24 Kbytes
  33 Pages
制造商  INTEL [Intel Corporation]
网页  http://www.intel.com
标志 INTEL - Intel Corporation
功能描述 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

N28F001BX-T150 Datasheet (PDF)

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N28F001BX-T150 Datasheet PDF - Intel Corporation

部件名 N28F001BX-T150
下载  N28F001BX-T150 Click to download

文件大小   436.24 Kbytes
  33 Pages
制造商  INTEL [Intel Corporation]
网页  http://www.intel.com
标志 INTEL - Intel Corporation
功能描述 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

N28F001BX-T150 数据表 (HTML) - Intel Corporation

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N28F001BX-T150 产品详情

Intel’s 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with features that simplify write and allow block erase. These devices aid the system designer by combining the functions of several components into one, making boot block flash an innovative alternative to EPROM and EEPROM or battery-backed static RAM. Many new and existing designs can take advantage of the 28F001BX’s integration of blocked architecture, automated electrical reprogramming, and standard processor interface.

■ High-Integration Blocked Architecture
    — One 8 KB Boot Block w/Lock Out
    — Two 4 KB Parameter Blocks
    — One 112 KB Main Block
■ 100,000 Erase/Program Cycles Per Block
■ Simplified Program and Erase
    — Automated Algorithms via On-Chip Write State Machine (WSM)
■ SRAM-Compatible Write Interface
■ Deep Power-Down Mode
    — 0.05 mA ICC Typical
    — 0.8 mA IPP Typical
■ 12.0V g5% VPP
■ High-Performance Read
    — 70/75 ns, 90 ns, 120 ns, 150 ns Maximum Access Time
    — 5.0V g10% VCC
■ Hardware Data Protection Feature
    — Erase/Write Lockout during Power Transitions
■ Advanced Packaging, JEDEC Pinouts
    — 32-Pin PDIP
    — 32-Lead PLCC, TSOP
■ ETOXTM II Nonvolatile Flash Technology
    — EPROM-Compatible Process Base
    — High-Volume Manufacturing Experience
■ Extended Temperature Options




类似零件编号 - N28F001BX-T150

制造商部件名数据表功能描述
logo
Intel Corporation
N28F010-120 INTEL-N28F010-120 Datasheet
405Kb / 30P
   1024K (128K x 8) CMOS FLASH MEMORY
N28F010-120 INTEL-N28F010-120 Datasheet
895Kb / 33P
   28F010 1024K (128K X 8) CMOS FLASH MEMORY
N28F010-150 INTEL-N28F010-150 Datasheet
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   1024K (128K x 8) CMOS FLASH MEMORY
N28F010-150 INTEL-N28F010-150 Datasheet
895Kb / 33P
   28F010 1024K (128K X 8) CMOS FLASH MEMORY
N28F010-65 INTEL-N28F010-65 Datasheet
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类似说明 - N28F001BX-T150

制造商部件名数据表功能描述
logo
Intel Corporation
A28F200BX-T INTEL-A28F200BX-T Datasheet
459Kb / 33P
   2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
28F200BX-TB INTEL-28F200BX-TB Datasheet
562Kb / 48P
   2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
A28F200BR-TB INTEL-A28F200BR-TB Datasheet
440Kb / 36P
   2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
28F200BL-TB INTEL-28F200BL-TB Datasheet
496Kb / 42P
   2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
28F002BC INTEL-28F002BC Datasheet
455Kb / 37P
   28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY
logo
STMicroelectronics
M29W008ET STMICROELECTRONICS-M29W008ET Datasheet
282Kb / 43P
   8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
logo
Intel Corporation
M28F008 INTEL-M28F008 Datasheet
401Kb / 28P
   8 MBIT (1 MBIT x 8) FLASH MEMORY
VE28F008 INTEL-VE28F008 Datasheet
381Kb / 26P
   8 MBIT (1 MBIT x 8) FLASH MEMORY
logo
Numonyx B.V
M29W800DT NUMONYX-M29W800DT Datasheet
1Mb / 52P
   8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
logo
Sharp Corporation
LH28F008SAHR SHARP-LH28F008SAHR Datasheet
1Mb / 29P
   8 MBIT(1 MBIT x 8)FLASH MEMORY
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关于 Intel Corporation


英特尔公司(Intel Corporation)是一家总部位于加利福尼亚州圣克拉拉(Santa Clara)的美国跨国公司和技术公司。
它是基于收入的世界上最大,最高价值的半导体芯片制造商之一。
英特尔以其开发微处理器,计算机的中央处理单元(CPU)而闻名。
Intel成立于1968年,一直是计算机硬件行业的领导者五十年了。
除了微处理器外,该公司还提供各种产品和技术,包括数据中心和网络设备,固态驱动器,物联网(IoT)设备等。
英特尔还是5G网络和自动驾驶汽车开发的领先参与者。
专注于创新和技术领导力,英特尔继续在塑造计算和技术的未来中发挥重要作用。
该公司在研发上进行了大量投资,并因其创新而获得了17,000多项专利。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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