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GAL22V10B-25LP 数据表 (PDF) - Lattice Semiconductor

GAL22V10B-25LP Datasheet PDF - Lattice Semiconductor
部件名 GAL22V10B-25LP
下载  GAL22V10B-25LP 下载

文件大小   386.45 Kbytes
  29 Pages
制造商  LATTICE [Lattice Semiconductor]
网页  http://www.latticesemi.com
标志 LATTICE - Lattice Semiconductor
功能描述 High Performance E2CMOS PLD Generic Array Logic

GAL22V10B-25LP Datasheet (PDF)

Go To PDF Page 下载 数据表
GAL22V10B-25LP Datasheet PDF - Lattice Semiconductor

部件名 GAL22V10B-25LP
下载  GAL22V10B-25LP Click to download

文件大小   386.45 Kbytes
  29 Pages
制造商  LATTICE [Lattice Semiconductor]
网页  http://www.latticesemi.com
标志 LATTICE - Lattice Semiconductor
功能描述 High Performance E2CMOS PLD Generic Array Logic

GAL22V10B-25LP 数据表 (HTML) - Lattice Semiconductor

Back Button GAL22V10B-25LP Datasheet HTML 1Page - Lattice Semiconductor GAL22V10B-25LP Datasheet HTML 2Page - Lattice Semiconductor GAL22V10B-25LP Datasheet HTML 3Page - Lattice Semiconductor GAL22V10B-25LP Datasheet HTML 4Page - Lattice Semiconductor GAL22V10B-25LP Datasheet HTML 5Page - Lattice Semiconductor GAL22V10B-25LP Datasheet HTML 6Page - Lattice Semiconductor GAL22V10B-25LP Datasheet HTML 7Page - Lattice Semiconductor GAL22V10B-25LP Datasheet HTML 8Page - Lattice Semiconductor GAL22V10B-25LP Datasheet HTML 9Page - Lattice Semiconductor GAL22V10B-25LP Datasheet HTML 10Page - Lattice Semiconductor Next Button 

GAL22V10B-25LP 产品详情

Description
The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much less power when compared to bipolar 22V10 devices. E2 technology offers high speed (<100ms) erase times, providing the ability to reprogram or reconfigure the device quickly and efficiently.

Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY
    — 4 ns Maximum Propagation Delay
    — Fmax = 250 MHz
    — 3.5 ns Maximum from Clock Input to Data Output
    — UltraMOS® Advanced CMOS Technology
• ACTIVE PULL-UPS ON ALL PINS
• COMPATIBLE WITH STANDARD 22V10 DEVICES
    — Fully Function/Fuse-Map/Parametric Compatible with Bipolar and UVCMOS 22V10 Devices
• 50% to 75% REDUCTION IN POWER VERSUS BIPOLAR
    — 90mA Typical Icc on Low Power Device
    — 45mA Typical Icc on Quarter Power Device
• E2 CELL TECHNOLOGY
    — Reconfigurable Logic
    — Reprogrammable Cells
    — 100% Tested/100% Yields
    — High Speed Electrical Erasure (<100ms)
    — 20 Year Data Retention
• TEN OUTPUT LOGIC MACROCELLS
    — Maximum Flexibility for Complex Logic Designs
• PRELOAD AND POWER-ON RESET OF REGISTERS
    — 100% Functional Testability
• APPLICATIONS INCLUDE:
    — DMA Control
    — State Machine Control
    — High Speed Graphics Processing
    — Standard Logic Speed Upgrade
• ELECTRONIC SIGNATURE FOR IDENTIFICATION




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