制造商 | 部件名 | 数据表 | 功能描述 |
Integrated Circuit Solu... |
IC61S25632T
|
397Kb / 22P |
8Mb SyncBurst Pipelined SRAM
|
Maxim Integrated Produc... |
DS1270W
|
156Kb / 8P |
3.3V 16Mb Nonvolatile SRAM
110602 |
Integrated Circuit Solu... |
IC61SF25632T
|
476Kb / 19P |
8Mb SyncBurst Flow through SRAM
|
Dallas Semiconductor |
DS1270W
|
194Kb / 8P |
3.3V 16Mb Nonvolatile SRAM
|
Integrated Circuit Solu... |
IC61SP12832
|
254Kb / 16P |
128K x 32 Pipelined SyncBurst SRAM
|
IC61SF12832
|
174Kb / 17P |
128K x 32 Flow Through SyncBurst SRAM
|
Maxim Integrated Produc... |
DS2070W
|
218Kb / 12P |
3.3V Single-Piece 16Mb Nonvolatile SRAM
Rev 0; 8/06 |
NanoAmp Solutions, Inc. |
N16T1630C2B
|
245Kb / 9P |
16Mb Ultra-Low Power Asynchronous CMOS SRAM
|
Samsung semiconductor |
K6F1616U6C
|
156Kb / 10P |
16Mb(1M x 16 bit) Low Power SRAM
|
Maxim Integrated Produc... |
DS3070W
|
275Kb / 18P |
3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock
Rev 1; 10/06 |