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AM29F200BT-50 数据表 (PDF) - Advanced Micro Devices

AM29F200BT-50 Datasheet PDF - Advanced Micro Devices
部件名 AM29F200BT-50
下载  AM29F200BT-50 下载

文件大小   519.0 Kbytes
  39 Pages
制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices
功能描述 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

AM29F200BT-50 Datasheet (PDF)

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AM29F200BT-50 Datasheet PDF - Advanced Micro Devices

部件名 AM29F200BT-50
下载  AM29F200BT-50 Click to download

文件大小   519.0 Kbytes
  39 Pages
制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices
功能描述 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

AM29F200BT-50 数据表 (HTML) - Advanced Micro Devices

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AM29F200BT-50 产品详情

GENERAL DESCRIPTION
The Am29F200B is a 2 Mbit, 5.0 Volt-only Flash memory organized as 262,144 bytes or 131,072 words. The 8 bits of data appear on DQ0–DQ7; the 16 bits on DQ0–DQ15. The Am29F200B is offered in 44-pin SO and 48-pin TSOP packages. The device is also available in Known Good Die (KGD) form. For more information, refer to publication number 21257. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
    — Minimizes system level power requirements
■ Manufactured on 0.32 µm process technology
    — Compatible with 0.5 µm Am29F200A device
■ High performance
    — Access times as fast as 45 ns
■ Low power consumption
    — 20 mA typical active read current (byte mode)
    — 28 mA typical active read current for (word mode)
    — 30 mA typical program/erase current
    — 1 µA typical standby current
■ Sector erase architecture
    — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and three 64 Kbyte sectors (byte mode)
    — One 8 Kword, two 4 Kword, one 16 Kword, and three 32 Kword sectors (word mode)
    — Supports full chip erase
    — Sector Protection features:
    A hardware method of locking a sector to prevent any program or erase operations within that sector
    Sectors can be locked via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors
■ Top or bottom boot block configurations available
■ Embedded Algorithms
    — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors
    — Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Minimum 1,000,000 write/erase cycles guaranteed
■ 20-year data retention at 125°C
    — Reliable operation for the life of the system
■ Package options
    — 44-pin SO
    — 48-pin TSOP
    — Known Good Die (KGD) (see publication number 21257)
■ Compatible with JEDEC standards
    — Pinout and software compatible with single-power-supply flash
    — Superior inadvertent write protection
■ Data# Polling and Toggle Bit
    — Detects program or erase cycle completion
■ Ready/Busy# output (RY/BY#)
    — Hardware method for detection of program or erase cycle completion
■ Erase Suspend/Erase Resume
    — Supports reading data from a sector not being erased
■ Hardware RESET# pin
    — Resets internal state machine to the reading array data




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关于 Advanced Micro Devices


Advanced Micro Devices,Inc。(AMD)是一家位于加利福尼亚州圣克拉拉的美国跨国半导体公司。
它是用于消费者,商业和专业市场的微处理器,图形处理器和计算机系统的领先生产商。
AMD以其竞争性的CPU产品而闻名,包括Ryzen和EPYC处理器系列及其Radeon Graphics产品。
AMD成立于1969年,在科技行业的历史悠久,并且一直是PC和服务器市场的主要参与者。
近年来,该公司扩大了产品的产品,以解决数据中心,游戏和人工智能中对计算能力的不断增长的需求。
侧重于创新和先进的技术,AMD旨在向全球客户提供高性能计算解决方案。

*此信息仅供一般参考,对于因上述信息造成的任何损失或损害,我们概不负责。




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