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SW50N06V2 数据表 (PDF) - Xian Semipower Electronic Technology Co., Ltd.
SW50N06V2 Datasheet PDF - Xian Semipower Electronic Technology Co., Ltd.
部件名 SW50N06V2
下载  SW50N06V2 下载

文件大小   593.82 Kbytes
页   6 Pages
制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.
功能描述 N-channel Enhanced mode TO-252 MOSFET

SW50N06V2 Datasheet (PDF)

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SW50N06V2 Datasheet PDF - Xian Semipower Electronic Technology Co., Ltd.

部件名 SW50N06V2
下载  SW50N06V2 Click to download

文件大小   593.82 Kbytes
页   6 Pages
制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.
功能描述 N-channel Enhanced mode TO-252 MOSFET

SW50N06V2 数据表 (HTML) - Xian Semipower Electronic Technology Co., Ltd.

SW50N06V2 Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SW50N06V2 Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SW50N06V2 Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SW50N06V2 Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd. SW50N06V2 Datasheet HTML 5Page - Xian Semipower Electronic Technology Co., Ltd. SW50N06V2 Datasheet HTML 6Page - Xian Semipower Electronic Technology Co., Ltd.

SW50N06V2 产品详情

General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features
● High ruggedness
● Low RDS(ON) (Typ 11mΩ)@VGS=10V
                           (Typ 14mΩ)@VGS=4.5V
● Low Gate Charge (Typ 59nC)
● Improved dv/dt Capability
● 100% Avalanche Tested
● Application:Electronic Ballast, Motor Control Synchronous Rectification, Inverter




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