制造商 | 部件名 | 数据表 | 功能描述 |
Jiangsu Changjiang Elec... |
CJD02N60
|
1Mb/4P
|
N-Channel Power MOSFET
|
ZP Semiconductor |
CJI02N60
|
1Mb/3P
|
N-Channel Power MOSFET
|
Jiangsu Changjiang Elec... |
CJP02N60
|
197Kb/3P
|
Power Filed Effect Transistor
|
ZP Semiconductor |
CJP02N60
|
1Mb/3P
|
N-Channel Power MOSFET
|
CJPF02N60
|
1Mb/3P
|
Plastic-Encapsulate MOSFETS
|
Jiangsu Changjiang Elec... |
CJPF02N60
|
1Mb/4P
|
N-Channel Power MOSFET
|
ZP Semiconductor |
CJU02N60
|
938Kb/3P
|
Plastic-Encapsulate MOSFETS
|
SHENZHEN DOINGTER SEMIC... |
CJU02N60
|
1Mb/5P
|
N-Channel MOSFET uses advanced trench technology
|
List of Unclassifed Man... |
CMT02N60
|
328Kb/7P
|
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectroni... |
CMT02N60
|
205Kb/6P
|
POWER FIELD EFFECT TRANSISTOR
|
CMT02N60
|
241Kb/7P
|
POWER FIELD EFFECT TRANSISTOR
|
GTM CORPORATION |
GE02N60
|
248Kb/5P
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
E-Tech Electronics LTD |
GE02N60
|
252Kb/5P
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
Hi-Sincerity Mocroelect... |
H02N60
|
74Kb/6P
|
N-Channel Power Field Effect Transistor
|
Stanson Technology |
M02N60
|
169Kb/5P
|
N Channel MOSFET
|
VBsemi Electronics Co.,... |
SDU02N60
|
1Mb/9P
|
N-Channel 650 V (D-S) MOSFET
|
SamHop Microelectronics... |
SDUD02N60
|
161Kb/11P
|
Super high dense cell design for low RDS(ON).
|
Infineon Technologies A... |
SGB02N60
|
385Kb/12P
|
FAST IGBT IN NPT TECHNOLOGY
Jul-02
|
SGB02N60
|
798Kb/11P
|
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
Rev. 2.3 Nov 06
|
SGD02N60
|
385Kb/12P
|
FAST IGBT IN NPT TECHNOLOGY
Jul-02
|