制造商 | 部件名 | 数据表 | 功能描述 |
Unisonic Technologies |
12N60
|
358Kb/7P
|
12 Amps, 600/650 Volts N-CHANNEL MOSFET
|
12N60
|
371Kb/7P
|
12A, 600V N-CHANNEL POWER MOSFET
|
12N60
|
379Kb/8P
|
N-CHANNEL JUNCTION FET
|
22N60
|
211Kb/6P
|
22A, 600V N-CHANNEL POWER MOSFET
|
22N60
|
239Kb/6P
|
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
|
Alpha & Omega Semicondu... |
AOD2N60
|
332Kb/6P
|
600V, 2A N-Channel MOSFET
|
AOT2N60
|
165Kb/6P
|
600V,2A N-Channel MOSFET
|
Champion Microelectroni... |
CMT02N60
|
241Kb/7P
|
POWER FIELD EFFECT TRANSISTOR
|
DinTek Semiconductor Co... |
DTL2N60
|
3Mb/11P
|
Power MOSFET Available in Tape and Reel
|
DTU2N60
|
2Mb/11P
|
Power MOSFET Halogen-free According to IEC 61249-2-21 Definition
|
Leshan Radio Company |
L2N60
|
808Kb/9P
|
600V N-Channel MOSFET Low gane charge
|
Nanjing International G... |
NJ2N60
|
833Kb/6P
|
2.0A 600V N-CHANNEL POWER MOSFET
|
Infineon Technologies A... |
SGB02N60
|
798Kb/11P
|
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
Rev. 2.3 Nov 06
|
SGP02N60
|
358Kb/12P
|
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
Rev. 2.3 Sep 07
|
SKB02N60
|
1Mb/13P
|
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Rev. 2.2 Oct. 07
|
GOOD-ARK Electronics |
SSF2N60
|
1Mb/7P
|
600V N-Channel MOSFET
|
Taiwan Semiconductor Co... |
TSM2N60
|
459Kb/8P
|
600V N-Channel Power MOSFET
|
TSM2N60
|
157Kb/4P
|
N-Channel Power Enhancement Mode MOSFET
|
TSM2N60
|
348Kb/8P
|
600V N-Channel Power MOSFET
|
Wisdom technologies Int... |
WFF2N60
|
1Mb/6P
|
600V N-Channel MOSFET
|