制造商 | 部件名 | 数据表 | 功能描述 |
Diodes Incorporated |
2N7002H
|
444Kb/6P
|
N-CHANNEL ENHANCEMENT MODE MOSFET
|
Nexperia B.V. All right... |
2N7002H
|
283Kb/15P
|
60 V, N-channel Trench MOSFET
1 December 2021
|
Diodes Incorporated |
2N7002H-13
|
444Kb/6P
|
N-CHANNEL ENHANCEMENT MODE MOSFET
|
2N7002H-7
|
444Kb/6P
|
N-CHANNEL ENHANCEMENT MODE MOSFET
|
Infineon Technologies A... |
2N7002H6327XTSA2
|
287Kb/9P
|
OptiMOS??Small-Signal-Transistor
Rev. 2.3 2010-08-26
|
Nexperia B.V. All right... |
2N7002HS
|
294Kb/15P
|
60 V, dual N-channel Trench MOSFET
15 December 2021
|
Shanghai Leiditech Elec... |
2N7002HW
|
1Mb/6P
|
We declare that the material of product compliance with RoHS requirements and Halogen Free.
Rev : 01.06.2015
|
Nexperia B.V. All right... |
2N7002HW
|
283Kb/15P
|
60 V, N-channel Trench MOSFET
1 December 2021
|
Search Partnumber :
Start with "2N7002H" -
Total : 109 ( 1/6 Page) |
Diodes Incorporated |
2N7002H-13
|
444Kb/6P |
N-CHANNEL ENHANCEMENT MODE MOSFET
|
2N7002H-7
|
444Kb/6P |
N-CHANNEL ENHANCEMENT MODE MOSFET
|
Infineon Technologies A... |
2N7002H6327XTSA2
|
287Kb/9P |
OptiMOS??Small-Signal-Transistor
Rev. 2.3 2010-08-26 |
Nexperia B.V. All right... |
2N7002HS
|
294Kb/15P |
60 V, dual N-channel Trench MOSFET
15 December 2021 |
Shanghai Leiditech Elec... |
2N7002HW
|
1Mb/6P |
We declare that the material of product compliance with RoHS requirements and Halogen Free.
Rev : 01.06.2015 |
Nexperia B.V. All right... |
2N7002HW
|
283Kb/15P |
60 V, N-channel Trench MOSFET
1 December 2021 |
Diodes Incorporated |
2N7002-01
|
63Kb/3P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30026 Rev. C-5 |
2N7002-13-F
|
118Kb/5P |
N-CHANNEL ENHANCEMENT MODE MOSFET
|
2N7002-13-F
|
346Kb/5P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
NXP Semiconductors |
2N7002-215
|
159Kb/13P |
60 V, 300 mA N-channel Trench MOSFET
Rev. 7-8 September 2011 |
Guangdong Kexin Industr... |
2N7002-3
|
968Kb/2P |
N-Channel Enhancement MOSFET
|
Diodes Incorporated |
2N7002-7
|
132Kb/5P |
N-CHANNEL ENHANCEMENT MODE MOSFET
|