制造商 | 部件名 | 数据表 | 功能描述 |
Chino-Excel Technology |
CED1012
|
379Kb/4P
|
N-Channel Enhancement Mode Field Effect Transistor
|
CED1012L
|
695Kb/4P
|
N-Channel Enhancement Mode Field Effect Transistor
|
Search Partnumber :
Start with "CED1012" -
Total : 47 ( 1/3 Page) |
Chino-Excel Technology |
CED1012L
|
695Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
|
CET-MOS Technology Corp... |
CED1010AL
|
440Kb/5P |
N-Channel Enhancement Mode Field Effect Transistor
Rev .1 2022.May |
CED1010L
|
939Kb/5P |
N-Channel Enhancement Mode Field Effect Transistor
Rev .1 2020.Aug |
Chino-Excel Technology |
CED10P10
|
389Kb/4P |
P-Channel Enhancement Mode Field Effect Transistor
|
CET-MOS Technology Corp... |
CED110P03
|
643Kb/4P |
P-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2011.Dec |
CED1185
|
661Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 1. 2013.Aug |
Chino-Excel Technology |
CED1185
|
651Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
|
CET-MOS Technology Corp... |
CED1188SA
|
428Kb/5P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 1. 2021.Nov |
CED11N65S
|
519Kb/5P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 1. 2019.Sep |
CED11P10
|
547Kb/5P |
P-Channel Enhancement Mode Field Effect Transistor
Rev 1. 2018.Mar |
CED11P20
|
679Kb/4P |
P-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2012.June |
CED1210
|
739Kb/5P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2016.Sep. |
CED1210A
|
500Kb/5P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2020.April. |
Chino-Excel Technology |
CED12N10
|
140Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
|
VBsemi Electronics Co.,... |
CED12N10
|
978Kb/7P |
N-Channel 100 V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
CED12N10
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
CET-MOS Technology Corp... |
CED12N10
|
873Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 3. 2008.Oct. |
CED12N10L
|
552Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 1. 2010.June. |